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Chemical mechanical polishing method and device

A technology of chemical machinery and polishing devices, which is applied in the direction of grinding devices, grinding/polishing equipment, surface polishing machine tools, etc., can solve the problems affecting the effect of fine polishing and cleaning, and achieve the effect of reducing particle defects

Active Publication Date: 2021-02-09
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the rough polishing process, the polishing liquid particles and polishing by-products attached to the surface of the semiconductor wafer will affect the effect of the subsequent fine polishing
For another example, during the cleaning process after the chemical mechanical polishing process of the semiconductor wafer is completed, the polishing liquid particles and polishing by-products attached to the surface of the semiconductor wafer are brought into the cleaning unit, which affects the cleaning effect

Method used

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  • Chemical mechanical polishing method and device

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Embodiment 1

[0039] In order to solve the problems in the prior art, the invention provides a chemical mechanical polishing method, comprising:

[0040] Provide semiconductor wafers to be polished;

[0041] performing a chemical mechanical polishing process on the semiconductor wafer, wherein the semiconductor wafer is located on a first plane during the chemical mechanical polishing process;

[0042] performing a floating processing step on the semiconductor wafer, wherein in the floating processing step the semiconductor wafer is located at a second plane higher than the first plane and is suspended below a surface of the semiconductor wafer, and wherein, The semiconductor wafer is rotated in the floating processing step.

[0043] see below figure 2 and Figure 3A-Figure 3C A chemical mechanical polishing method according to the present invention is exemplified. in, figure 2 It is a schematic flow chart of a chemical mechanical polishing method according to an embodiment of the pr...

Embodiment 2

[0077] The present invention also provides a chemical mechanical polishing device, comprising:

[0078] The movement of the semiconductor wafer driven by the polishing head includes a first movement and a second movement,

[0079] Under the first movement, a chemical mechanical polishing process is performed, wherein the polishing head is located on a first plane during the chemical mechanical polishing process;

[0080] Under the second movement, a floating processing step is performed, wherein in the floating processing step, the polishing head is located at a second plane higher than the first plane and the semiconductor crystal held by the polishing head is The circle is suspended below, and wherein the polishing head is rotated during the suspension processing step.

[0081] see Figure 3A-Figure 3C An example of a chemical mechanical polishing device according to the present invention is described.

[0082] Such as Figure 3A As shown, the chemical mechanical polishi...

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Abstract

The invention discloses a chemical mechanical polishing method and a device. The method comprises the following steps that a semiconductor wafer to be polished is provided; a chemical mechanical polishing process is carried out on the semiconductor wafer, and the semiconductor wafer is located on a first plane in the chemical mechanical polishing process; and a suspension processing step is carried out on the semiconductor wafer, the semiconductor wafer is located on a second plane higher than the first plane and the portion below the surface of the semiconductor wafer is suspended in the suspension processing step, and wherein the semiconductor wafer rotates in the suspension processing step. According to the invention the chemical mechanical polishing method and the device, the semiconductor wafer is lifted to a certain height to be far away from a polishing pad for the suspension processing step, so that the semiconductor wafer rotates, a polishing solution on the surface of the semiconductor wafer, polishing particles in the polishing solution and the polishing by-products are separated from the surface of the semiconductor wafer, and therefore, the polishing solution particlesand the polishing by-products adhered to the surface of the wafer are prevented from influencing subsequent processing steps.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical mechanical polishing method and device. Background technique [0002] In the process of semiconductor manufacturing, from the manufacture of the wafer to the formation of the device, there are many steps of performing chemical mechanical polishing on the semiconductor wafer. In the process of chemical mechanical polishing of semiconductor wafers, since the polishing fluid used contains a large amount of particles, and at the same time, it will produce by-products, consumable debris and other residues during the chemical mechanical polishing process, these substances will adhere to the semiconductor wafer. round surfaces such as figure 1 As shown, after the polishing head 101 supports the semiconductor wafer 100 to perform a chemical mechanical polishing process on the surface of the polishing pad 102, since the surface of the polishing pad needs to spray the po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B29/02H01L21/306H01L21/67
CPCB24B1/00B24B29/02H01L21/30625H01L21/67092B24B37/04H01L21/02024H01L21/02052H01L21/02065H01L21/02074H01L21/31053H01L21/3212H01L21/67017H01L21/67023H01L21/67051H01L21/6715H01L21/461
Inventor 沙酉鹤谢越
Owner ZING SEMICON CORP
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