Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive photosensitive resin composition, method for forming patterned resist film, and patterned resist film

A technology of photosensitive resin and composition, which is applied in the field of resist film, can solve problems such as insufficient resolution and resist pattern peeling, and achieve the effect of high sensitivity

Pending Publication Date: 2021-02-09
TOKYO OHKA KOGYO CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when a negative photosensitive composition is used, there are problems in that the resolution is insufficient; or it is sometimes difficult to peel the resist pattern from the substrate; and the like.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive photosensitive resin composition, method for forming patterned resist film, and patterned resist film
  • Positive photosensitive resin composition, method for forming patterned resist film, and patterned resist film
  • Positive photosensitive resin composition, method for forming patterned resist film, and patterned resist film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0122]

[0123] The positive-type photosensitive resin composition can be prepared by mixing and stirring each of the above-mentioned components in a predetermined ratio, followed by mixing and stirring by a normal method. In addition, filtration may be further performed using a mesh, a membrane filter, or the like as necessary.

[0124] "Formation Method of Patterned Resist Film"

[0125] The patterned resist film can be formed by a method including the following steps:

[0126] A step of coating the aforementioned positive photosensitive resin composition on a substrate to form a coating film;

[0127] A step of exposing the coating film in a regioselective manner; and,

[0128] A process of developing the exposed coating film with a developing solution.

[0129] Coating of the positive photosensitive resin composition to the substrate is performed using a spin coater, roll coater, spray coater, slit coater, or the like. The coating device is not limited to these. Usu...

Embodiment 1～10、 and comparative example 1～6

[0138] In Examples and Comparative Examples, as the Novolac resin (A) ((A) component), a cresol Novolac resin (weight average molecular weight 6000) having a mass of m-cresol / p-cresol of 36 / 64 was used.

[0139] In Examples and Comparative Examples, the following B-I, B-II, and B-III were used as the quinonediazide group-containing compound (B) ((B) component). B-I belongs to the compound represented by the aforementioned formula (B1). B-II belongs to the compound represented by the aforementioned formula (B2). B-III belongs to the compound represented by the aforementioned formula (B3). It should be noted that, with regard to the average introduction rate of the quinonediazide group of each compound (referring to the average, how many moles of the substituent OD are substituted by the quinonediazide group), B-I is 2.1 moles, and B-II 1.7 moles for B-III and 2.5 moles for B-III.

[0140] [chemical formula 6]

[0141]

[0142] In Examples and Comparative Examples, the fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a positive photosensitive resin composition, a method for forming a patterned resist film, and a patterned resist film. The present invention addresses the problem of providing: a positive-type photosensitive resin composition which is capable of forming a patterned resist film having a good cross-sectional shape and has high sensitivity, a method for forming a patterned resist film using the positive-type photosensitive resin composition, and a patterned resist film formed from the positive photosensitive resin composition. A positive photosensitive resin compositioncomprising: a Novolac resin (A); a quinone diazido group-containing compound (B); a sensitizer (C) that is a compound having a phenolic hydroxyl group and having a molecular weight of 1000 or less; and a phenolic hydroxyl group-containing resin (D) in an amount within a predetermined range, the phenolic hydroxyl group-containing resin (D) being a resin having a weight average molecular weight of more than 1000 other than Novolac resin A.

Description

technical field [0001] The present invention relates to a method for forming a positive photosensitive resin composition, a patterned resist film, and a patterned resist film. Background technique [0002] As a method of forming wiring and terminals on a substrate, there are known methods of etching a metal layer using a resist pattern as a mask pattern, or performing electroplating using a resist pattern as a mold pattern for electroplating. [0003] As a method of forming a resist pattern when forming wiring and terminals on a substrate, it is generally a method of forming a photosensitive composition layer on a substrate using a dry film formed of a negative photosensitive composition, and applying The photosensitive composition layer is exposed and developed. However, when using a negative photosensitive composition, there exists a problem that resolution is insufficient, or it may become difficult to peel a resist pattern from a board|substrate, etc. [0004] As a mea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/004G03F7/16G03F7/20G03F7/30
CPCG03F7/004G03F7/039G03F7/16G03F7/162G03F7/20G03F7/30
Inventor 松本直纯
Owner TOKYO OHKA KOGYO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com