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Resist underlayer film-forming composition comprising amide group-containing polyester

A technology of resist lower layer and compound, applied in the direction of organic chemistry, photolithographic process of pattern surface, photosensitive material used in photomechanical equipment, etc., can solve the problem of resist pattern collapse, processing into desired shape or Size and other issues, to achieve the effect of dry etching speed, good cross-sectional shape, and sufficient anti-reflection function

Inactive Publication Date: 2019-06-04
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, if the resist pattern becomes an undercut shape or a wide-bottomed shape, the resist pattern will collapse, and the workpiece (substrate, insulating film, etc.) cannot be processed into the desired shape or size during the photolithography process. such problem

Method used

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  • Resist underlayer film-forming composition comprising amide group-containing polyester
  • Resist underlayer film-forming composition comprising amide group-containing polyester
  • Resist underlayer film-forming composition comprising amide group-containing polyester

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0177] Hereinafter, the present invention will be described in further detail with reference to examples, but the present invention is not limited to the following aspects.

[0178] The identification of the compounds obtained in the following synthesis examples of this specification was carried out by NMR analysis. The apparatus used, measurement conditions, etc. are as follows.

[0179] Device: JNM-ECA500 manufactured by JEOL Ltd.

[0180] Nuclear species: proton

[0181] Temperature: 23°C

[0182] Frequency: 500MHz

[0183] Deuterated solvent: DMSO

[0184] The weight average molecular weight of the compound obtained in the following synthesis example of this specification is the measurement result by gel permeation chromatography (it abbreviates to GPC hereafter). The measurement apparatus, measurement conditions, and the like are as follows.

[0185] Device: HLC-8320GPC manufactured by Tosoh Corporation

[0186] GPC column: Asahipak [registered trademark] GF-310HQ,...

Synthetic example 1

[0192] Add 10.82 g of 1,4-phenylenediamine, 23.96 g of glutaric anhydride, and 139.02 g of tetrahydrofuran to a flask equipped with a stirrer, a thermometer, and a Dimrot cooling tube, and put the reaction solution into 300 ml of acetone to make the target substance Precipitate. The precipitate was filtered with a Kiriyama funnel, washed with acetone, and then dried under reduced pressure at 40° C. for 12 hours to obtain 31.27 g of a white powder (93% yield).

[0193] It was confirmed by NMR analysis that a compound (purity>95%) estimated to have the structure shown below was obtained. σ=1.79(4H, quin), 2.26(4H, t), 2.31(4H, t), 7.48(4H, D), 9, 80(2H, s), 12.06(2H, br)

[0194]

[0195] In the flask equipped with a stirrer, a thermometer, and a Dimrot cooling tube, 47.72 g of cyclohexanone (hereinafter referred to as CYH in this specification), 47.72 g of N,N-2-trimethylpropionamide (hereinafter , abbreviated as DMIB in this specification.) 11.93g, 6.60g of the obtained c...

Synthetic example 2

[0198] 10.81 g of 1,3-phenylenediamine, 23.97 g of glutaric anhydride, and 139.32 g of tetrahydrofuran were added to a flask equipped with a stirrer, a thermometer, and a Dimrot cooling tube, and heated to reflux for 2 hours under a nitrogen atmosphere. After completion of the reaction, the inside of the system was cooled down to room temperature, and then the reaction solution was poured into 300 ml of acetone to precipitate the target substance. The precipitate was filtered with a Kiriyama funnel, washed with acetone, and then dried under reduced pressure at 40° C. for 12 hours to obtain 22.69 g of a white powder (yield 71%).

[0199] It was confirmed by NMR analysis that a compound (purity>95%) estimated to have the structure shown below was obtained. σ=1.80(4H, quin), 2.27(4H, t), 2.33(4H, t), 7.17(1H, t), 7.25(2H, d), 7.92(1H, s), 9, 88(2H, s), 12.07 (2H, br)

[0200]

[0201] In a flask equipped with a stirrer, a thermometer, and a Dimrot cooling tube, 47.68 g of CY...

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Abstract

Provided is a resist underlayer film-forming composition which is capable of providing a resist underlayer film, said resist underlayer film exerting a sufficient anti-reflection function particularlyin a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The resist underlayer film-forming composition comprises a copolymer which contains: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents abenzene ring or a cyclohexane ring; X represents a hydrogen atom, an alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having2 to 11 carbon atoms; and Y represents -COOH or -L-NHCO-Z-COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, a sulfur atom or a nitrogen atom; and L represents a single bond or a spacer)].

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film provided between a substrate and a resist film (resist layer) formed thereon, suitable for a photolithography process in a semiconductor manufacturing process. Background technique [0002] When a resist film is exposed, reflected waves may adversely affect the resist film. The resist underlayer film formed for the purpose of suppressing this adverse effect is also called an antireflection film. [0003] The resist underlayer film is required to be easily formed by applying a solution-form resist underlayer film-forming composition and curing it. Therefore, the composition needs to contain a compound (polymer) that is easily cured by heating or the like and has high solubility in a predetermined solvent. [0004] In addition, the resist lower layer film is required to have a higher dry etching rate than the upper resist film, that is, a higher selectivity ratio of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C233/43C07C233/54C07C235/16C07C317/40C08G59/52G03F7/11G03F7/20
CPCC07C233/43C07C233/54C07C235/16C07C317/40G03F7/091G03F7/094C08G63/6886G03F7/11G03F7/20C08G59/52
Inventor 田村护绪方裕斗臼井友辉岸冈高广
Owner NISSAN CHEM CORP
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