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MEMS sensor and preparation method thereof

A sensor and electrode layer technology, applied in the field of MEMS sensor and its preparation, can solve the problems of complex preparation process and packaging process, low reliability of force sensor, etc.

Pending Publication Date: 2021-02-12
HANGZHOU SILAN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a MEMS sensor and its preparation method to solve the problems of low reliability, complex preparation process and packaging process of existing force sensors

Method used

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  • MEMS sensor and preparation method thereof
  • MEMS sensor and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0086] Figure 4 A schematic structural diagram of the MEMS sensor is provided for this embodiment. In this embodiment, the MEMS sensor is a force sensor, such as Figure 4 As shown, the force sensor includes a first substrate 100, a second substrate 110 and a supporting wall between the first substrate 100 and the second substrate 110, the first substrate 100 The front side is opposite to the front side of the second substrate 110, and the supporting wall together with the first substrate 100 and the second substrate 110 forms a closed cavity, wherein the first substrate 100 and the second substrate 110 respectively serve as the upper and lower surfaces of the cavity, and the supporting walls serve as the sides of the cavity.

[0087]Specifically, the support wall includes a first support layer 601, a second support layer 611 and a first conductive bonding layer 621, the first support layer 601 is formed on the front side of the first substrate 100, the The second supporti...

Embodiment 2

[0144] Figure 6 Schematic diagram of the structure of the MEMS sensor provided for this embodiment. Such as Figure 6 As shown, the difference from Embodiment 1 is that in this embodiment, two electrode layers are fixed on the front surface of the second substrate, that is, the third electrode layer 212a also has a fourth electrode layer 213a.

[0145] combine Figure 4 and Figure 6 , the fourth electrode layer 213a is located above the third electrode layer 212a, and the fourth electrode layer 213a is also fixed on the front surface of the second substrate 110 through a part of the second conductive connection structure, so There is a certain distance between the fourth electrode layer 213a and the third electrode layer 212a perpendicular to the thickness direction, so that there is an air interlayer between the fourth electrode layer 213a and the third electrode layer 212a.

[0146] The third electrode layer 212a and the fourth electrode layer 213a have an overlapping ...

Embodiment 3

[0171] Figure 7 A top view of the first substrate 100 provided in this embodiment. Such as Figure 7 and Figure 4 As shown, the difference from Embodiment 1 is that in this embodiment, the second electrode layer 202a is fixed on the front surface of the first substrate 100 through four first conductive connection structures, and the third electrode layer 212a The four second conductive connection structures are fixed on the front surface of the second substrate 110, the four first conductive connection structures are distributed at the four corners of the second electrode layer 202a, and the four second conductive connection structures are distributed at the four corners of the second electrode layer 202a. four sides of the third electrode layer 212a. The four corners of the second electrode layer 202a are respectively electrically connected to the corresponding pressure points through one of the first conductive connection structures, and the four sides of the third elec...

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Abstract

The invention provides an MEMS sensor and a preparation method thereof, and the method comprises the steps: forming corresponding electrode layers on the front surfaces of a first substrate and a second substrate, enabling the front surfaces of the first substrate and the second substrate to be bonded together through a bonding technology, and enabling the electrode layers to be sealed in a cavityformed through bonding, and the electrode layer is electrically connected with the pressure points on the front surface of the first substrate through a conductive connection structure or directly connected with the pressure points on the front surface of the first substrate. Equivalently, the preparation of the device is realized by utilizing an MEMS process, the reliability of the device is improved, the preparation difficulty is reduced, and the subsequent packaging step can be simplified.

Description

technical field [0001] The invention relates to the technical field, in particular to a MEMS sensor and a preparation method thereof. Background technique [0002] Since the concept of MEMS (Microelectromechanical System, MEMS) device was formed in the 1970s, MEMS device has progressed from the object of laboratory exploration to the object of high-level system integration, and has been widely used in mass consumer devices , exhibiting an astonishing and steady growth. The MEMS device includes a movable MEMS component, and various functions of the MEMS device can be realized by sensing or controlling the motion physical quantity of the movable MEMS component. An example is a force sensor, which can detect whether a pressing action and / or how hard it is pressed, such as a pressure touch button on a mobile phone. [0003] Known force sensors mainly include piezoresistor and capacitive. At present, the reliability of capacitive force sensors is not high, and the manufacturin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/04B81C1/00
CPCB81B7/04B81C1/00023B81C1/00047B81C1/00261B81B2201/02
Inventor 汪建平胡铁刚
Owner HANGZHOU SILAN MICROELECTRONICS
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