Graphite base and MOCVD equipment

Abstract

The invention provides a graphite base and MOCVD equipment, and belongs to the technical field of semiconductors. The graphite base is of a disc-shaped structure, the first circular end face of the graphite base comprises a plurality of epitaxial wafer containing grooves and a plurality of cambered surface grooves, the epitaxial wafer containing grooves are arranged in a multi-layer circular ringmode in the radial direction of the first circular end face, and the circle center of the circular ring coincides with the circle center of the first circular end face. The cambered surface grooves are uniformly formed in the first circular end surface among the plurality of epitaxial wafer containing grooves at intervals, and the inner surfaces of the cambered surface grooves are spherical crown-shaped. The first circular end face of the graphite base comprises the plurality of epitaxial wafer containing grooves and the plurality of cambered surface grooves, and the cambered surface grooves are uniformly formed in the first circular end face between the epitaxial wafer containing grooves at intervals, so that the uniformity of the epitaxial layer at the edge position of the graphite baseis improved, and the consistency of epitaxial wafers is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a graphite base and MOCVD equipment. Background technique [0002] LED (Light Emitting Diode, light emitting diode) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, and environmental protection, and is widely used in traffic indication, outdoor full-color display and other fields. When making LEDs, it is necessary to epitaxially grow semiconductor crystal materials on the substrate to form LED epitaxial wafers. [0003] Currently, epitaxial growth is realized by MOCVD (Metal Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition). The reaction chamber of the MOCVD equipment is equipped with a graphite base and a heating device. The graphite base is a disc made of high-purity graphite. The upper surface of the graphite base is provided with a plura...

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Problems solved by technology

Due to the large viscous resistance and the large linear velocity at the edge of the graphite pedestal, the Reynolds Number (Re, Reynolds Number) of the flow field at the edge of the graphite pedestal is easy to reach the boundary as the state in the reaction chamber changes during the epitaxial growth process. value, forming an unstable turbulent flow, and due to the centrifugal force, the reactant gas will be more likely to "pile up" at the side wall of the reaction chamber, forming a vortex zone, which will cause the growth of the substrate surface in the pocket at the edge of the graphite base The epitaxial layer is uneven, which affects the consistency of the epitaxial wafer

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