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chemical mechanical polishing method

A technology of chemical mechanics and grinding methods, which is applied in the manufacture of electrical components, circuits, semiconductors/solid devices, etc., can solve problems such as surface unevenness, and achieve the effect of improving surface uniformity

Active Publication Date: 2021-05-25
晶芯成(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a chemical mechanical grinding method to solve the problem of uneven surface of the product layer

Method used

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Embodiment Construction

[0023] The chemical mechanical polishing method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0024] refer to Figure 1 to Figure 10 ,in, figure 1 It is a schematic flow diagram of the chemical mechanical polishing method provided by the embodiment of the present invention; Figure 2 to Figure 3 It is a schematic diagram of the surface structure of the test wafer formed in the chemical mechanical polishing method provided by the embodiment of the present invention; Figure 4 It is a schematic cross-sectional view of the structure of a product wafer formed i...

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Abstract

The invention provides a chemical mechanical polishing method. Firstly, the product layer process conditions are preset according to the thickness of the first peripheral area and the thickness of the first central area of ​​the test layer, and then the product layer is formed on the product wafer according to the preset product layer process conditions. Product layer, when the thickness of the first peripheral region of the test layer is equal to the thickness of the first central region, the thickness of the second peripheral region of the product layer is equal to the thickness of the second central region, the first peripheral region of the test layer When the thickness of the region is less than the thickness of the first central region, the thickness of the second peripheral region of the product layer is greater than the thickness of the second central region, and the thickness of the first peripheral region of the test layer is greater than the thickness of the first central region. Then the thickness of the second peripheral region of the product layer is smaller than the thickness of the second central region, so that when the chemical mechanical grinding process is performed on the product layer, the rate deviation of chemical mechanical grinding can be counteracted, thereby the product layer can be improved. Surface uniformity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] In the integrated circuit manufacturing process, after the element structure or patterned metal wires are fabricated on the wafer, a product layer needs to be deposited on the wafer first, and then the subsequent metal layer is deposited. The product layer is mainly Used for isolation between metal layers. However, after the product layer is deposited, the surface of the product layer is often not flat. Therefore, a planarization process needs to be performed on the product layer to make the surface of the product layer smooth. [0003] The most commonly used planarization process is chemical mechanical polishing (CMP, Chemical Mechanical Planarization, also known as chemical mechanical polishing), the main principle of the chemical mechanical polishing is to suck the wafer on the grinding ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
CPCH01L21/30625
Inventor 陈笋弘白向阳程建秀曾盟善王松
Owner 晶芯成(北京)科技有限公司