Service life testing method for wafers

A technology of life testing and wafers, applied in the field of life testing of wafers, can solve the problems of cumbersome chemical passivation operation process, increase the production cost of enterprises, do not meet environmental protection requirements, etc., achieve high test efficiency and improve utilization rate , the effect of short measurement time

Pending Publication Date: 2021-02-12
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The passivation method usually adopted is chemical passivation, and the operation process of chemical passivation is cumbersome, complicated, time-consuming and labor-intensive. At the same time, the use of ch

Method used

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  • Service life testing method for wafers
  • Service life testing method for wafers
  • Service life testing method for wafers

Examples

Experimental program
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Example Embodiment

[0070]Example one:

[0071]The single crystal silicon rod with a diameter of 300mm is divided into three sections from the beginning to the end, namely the head 1#, the middle 2# and the tail 3#, and in the head 1#, the middle 2# and the tail 3# according to each section from the beginning Take a number of wafers 50 from the tail position, and mark the position of the wafer 50 in the segment at the same time, such as: 1-002 is the second in the head 1#, 2-102 is the middle 2# The 102nd piece. In this embodiment, the 2nd and 102nd slices of the head 1# are selected, namely 1-002 and 1-102, respectively; the second slice, the 102nd slice and the 202nd slice of the middle part 2# are respectively 2-002, 2-102, and 2-202; the second, 102, and 202 pieces of tail 3# are 3-002, 3-102, and 3-202, respectively. The life data obtained by the above steps are shown in Table 1. At the same time, according to the data in Table 1, the position of the taken wafer 50 in the monocrystalline silicon rod ...

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Abstract

The invention provides a service life testing method for wafers. The method comprises the steps of: oxidation, specifically, forming one oxidation film on one surface of a wafer at least; passivation,specifically, carrying out charge deposition on one of the wafer surfaces with the oxide films; and testing, namely, testing the service life of the passivated surface of the wafer. The testing method applies nondestructive testing; the service life of the carriers in the body of the wafer can be detected without chemical passivation of the wafer, a testing result is accurate, and the testing efficiency is high; the other physicochemical properties of the wafer can be continuously detected and tested after testing is completed; and therefore, the utilization rate of the wafer is increased, and the cost is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor wafer testing, and in particular relates to a wafer life testing method. Background technique [0002] Non-equilibrium minority carrier lifetime (minority carrier lifetime) is an important parameter of silicon crystal materials, which is directly related to impurities and crystal structure in single crystal wafers. Minority carrier lifetime has an important impact on the performance of semiconductor devices, so in semiconductor In the material production process, it is particularly important to accurately detect the minority carrier lifetime of silicon single wafers. There are many methods for measuring the lifetime of non-equilibrium minority carriers, which belong to two categories: transient method and steady state method. The transient method is to use pulse electricity or flash to excite non-equilibrium carriers in the semiconductor, change the bulk resistance of the semiconductor, and...

Claims

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Application Information

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IPC IPC(8): H01L21/66G01R31/307
CPCG01R31/307H01L22/10
Inventor 周迎朝由佰玲邓春星原宇乐董楠苗向春武卫刘建伟刘园孙晨光王彦君祝斌刘姣龙裴坤羽常雪岩杨春雪谢艳袁祥龙张宏杰刘秒吕莹徐荣清
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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