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Service life testing method for wafers

A technology of life testing and wafers, applied in the field of life testing of wafers, can solve the problems of cumbersome chemical passivation operation process, increase the production cost of enterprises, do not meet environmental protection requirements, etc., achieve high test efficiency and improve utilization rate , the effect of short measurement time

Pending Publication Date: 2021-02-12
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH +1
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  • Abstract
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  • Application Information

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Problems solved by technology

The passivation method usually adopted is chemical passivation, and the operation process of chemical passivation is cumbersome, complicated, time-consuming and labor-intensive. At the same time, the use of chemical passivation method requires the use of chemical reagents, which has great damage to the environment, does not meet environmental protection requirements, and increases business costs. Cost of production

Method used

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  • Service life testing method for wafers
  • Service life testing method for wafers
  • Service life testing method for wafers

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Embodiment 1

[0071] Divide the single crystal silicon rod with a diameter of 300mm into three sections from the beginning to the end, which are head 1#, middle part 2# and tail part 3#, and start from the beginning at the head 1#, middle part 2# and tail part 3# Take a number of wafers 50 from the position to the end, and mark the positions of the wafers 50 in the section, such as: 1-002 is the second piece in the head 1#, and 2-102 is the middle 2# 102nd tablet. In this embodiment, select the 2nd piece and the 102nd piece of the head 1#, namely respectively 1-002, 1-102; the 2nd piece, the 102nd piece and the 202nd piece of the middle part 2#, namely respectively 2-002, 2-102 and 2-202; the 2nd, 102nd and 202nd pieces of the tail 3#, that is, 3-002, 3-102 and 3-202 respectively. Adopt the lifetime data that above-mentioned steps obtains as shown in table 1; According to the data in table 1 simultaneously, take the position of wafer 50 in the monocrystalline silicon rod and take from head...

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Abstract

The invention provides a service life testing method for wafers. The method comprises the steps of: oxidation, specifically, forming one oxidation film on one surface of a wafer at least; passivation,specifically, carrying out charge deposition on one of the wafer surfaces with the oxide films; and testing, namely, testing the service life of the passivated surface of the wafer. The testing method applies nondestructive testing; the service life of the carriers in the body of the wafer can be detected without chemical passivation of the wafer, a testing result is accurate, and the testing efficiency is high; the other physicochemical properties of the wafer can be continuously detected and tested after testing is completed; and therefore, the utilization rate of the wafer is increased, and the cost is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor wafer testing, and in particular relates to a wafer life testing method. Background technique [0002] Non-equilibrium minority carrier lifetime (minority carrier lifetime) is an important parameter of silicon crystal materials, which is directly related to impurities and crystal structure in single crystal wafers. Minority carrier lifetime has an important impact on the performance of semiconductor devices, so in semiconductor In the material production process, it is particularly important to accurately detect the minority carrier lifetime of silicon single wafers. There are many methods for measuring the lifetime of non-equilibrium minority carriers, which belong to two categories: transient method and steady state method. The transient method is to use pulse electricity or flash to excite non-equilibrium carriers in the semiconductor, change the bulk resistance of the semiconductor, and...

Claims

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Application Information

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IPC IPC(8): H01L21/66G01R31/307
CPCH01L22/10G01R31/307
Inventor 周迎朝由佰玲邓春星原宇乐董楠苗向春武卫刘建伟刘园孙晨光王彦君祝斌刘姣龙裴坤羽常雪岩杨春雪谢艳袁祥龙张宏杰刘秒吕莹徐荣清
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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