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A method for realizing synapse with excitatory and inhibitory functions

A synaptic and exciting technology, applied in the synaptic field of neuromorphic computing, can solve problems such as changes in device channel conductance, and achieve the effect of plasticity and maintaining characteristics

Active Publication Date: 2022-05-20
PEKING UNIV
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Problems solved by technology

At this time, the non-volatile spontaneous polarization of the ferroelectric material will induce additional charges on the gate oxide layer of the MOSFET, resulting in a change in the device channel conductance

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  • A method for realizing synapse with excitatory and inhibitory functions

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Embodiment Construction

[0015] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0016] This embodiment uses Hf 0.5 Zr 0.5 o 2 The ferroelectric transistor FeFET of ferroelectric material, at this time, the spontaneous polarization of ferroelectric material will induce additional charges on the gate oxide layer of PMOS, resulting in a change in the channel conductance of the device. The charge induced by the ferroelectric polarization charge on the PMOS gate oxide layer can also be equivalent to an additional gate voltage, which can be reflected on the entire FeFET as a change in the channel conductance of the device.

[0017] Such as figure 1 As shown, the present embodiment is based on ferroelectric transistors with excitatory and inhibitory synaptic circuits, including ferroelectric transistors FeFET and PMOS; wherein, FeFET is used to realize the plasticity and retention characteristics of synapses, programming ...

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Abstract

The invention proposes a method for realizing synapse with excitatory and inhibitory functions, which belongs to the technical field of synaptic hardware in neuromorphic computing. The method uses ferroelectric transistors FeFET and PMOS to form a synaptic circuit; FeFET realizes the plasticity and memory characteristics of synapse, the gate terminal of FeFET is used as a programming (or erasing) port, the source terminal is biased as a suppression voltage, and the drain terminal is connected to PMOS The drain terminal of the PMOS is used as the output terminal of the synaptic voltage; the source terminal of the PMOS is used as the pulse input terminal of the pre-neuron, and the gate terminal is biased at a fixed power supply voltage; The voltage produces either an excitatory or an inhibitory voltage output at the synapse. Compared with the traditional MOSFET-based implementation, the present invention can significantly reduce hardware overhead, has strong drive capability, and is beneficial to the hardware implementation of large-scale highly interconnected neural networks.

Description

technical field [0001] The invention belongs to the technical field of synapses in neuromorphic computing, and in particular relates to a method for realizing synapses with excitatory and inhibitory functions based on ferroelectric transistors. Background technique [0002] With the vigorous development of information technology, human society has entered the era of "data explosion", and the annual exponential growth of data volume has brought unprecedented pressure on data processing and calculation. Due to the characteristics of the traditional von Neumann computing architecture, which separates storage and computing, the transmission of data between the storage unit and the computing unit will cause a lot of waste of power consumption and energy consumption. In today's information society and even the intelligent society, there is a huge amount of data In this context, this problem will become more and more serious. [0003] Inspired by the computing model of the human b...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06N3/063
CPCG06N3/063Y02D10/00
Inventor 黄如罗金刘天翊黄芊芊
Owner PEKING UNIV
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