Large-size X-plane KTP crystal and growth method thereof
A technology of crystal growth and large size, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of small size, and achieve the effect of improving the utilization rate and shortening the growth period
Active Publication Date: 2021-02-23
SHANDONG ZHONGSHAN PHOTOELECTRIC MATERIAL CO LTD
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[0005] Aiming at the technical problem that the size of the X-axis direction of the KTP crystal grown by the existing solvent-assisted method is small, the present invention provides a large-sized X-plane KTP crystal and its growth method. The method creatively selects the shape of the seed crystal and the direction of immersion into the flux, Thereby reducing the growth rate difference of KTP crystals in the three directions of X-axis, Y-axis and Z-axis, and finally obtaining KTP crystals with good optical uniformity, large size and higher utilization rate
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Embodiment 1
[0023] Such as figure 1 , 2 Shown, a kind of large size X face KTP crystal, the growth method of this crystal comprises the steps:
[0024] (1) Cut the seed crystal from the available X-axis KTP raw crystal blank, the X plane, Y plane and Z plane of the seed crystal are perpendicular to each other, and the seed crystal size is 20*4*4mm 3 (X*Y*Z) Finely chamfer the two sides of one of the seed crystals where the X surface and the Z surface intersect, and the angle between the chamfered side and the vertical direction is 45°;
[0025] (2) Based on KTP and K 6 P 4 o 13 The mass ratio of = 0.46:1, calculate the required KH 2 PO 4 、TiO 2 and K 2 CO 3 The masses are 2271g, 330g and 434g respectively, the KH 2 PO 4 、TiO 2 and K 2 CO 3 After fully and uniformly mixing, put it in a platinum crucible, first raise the temperature to 1000°C for full melting reaction, the reaction time is 6h, then raise the temperature to 1100°C for burning, the burning time is 12h, and then ...
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The invention relates to the technical field of non-linear crystal materials, and in particular, relates to a large-size X-plane KTP crystal and a growth method thereof. The large-size X-plane KTP crystal is prepared through the following growth method that an X plane serves as a seed crystal growth plane, a seed crystal is immersed in molten liquid to be sown and grow, and the seed crystal is notpulled in the crystal growth process; the X face, the Y face and the Z face of the seed crystal are perpendicular to one another, and the two edges, intersecting with the Z face, of the X face immersed in the molten liquid are chamfered edges. According to the method, the seed crystal shape and the flux immersion direction are creatively selected, so that the growth speed difference of the KTP crystal in the X-axis direction, the Y-axis direction and the Z-axis direction is reduced, and the KTP crystal with good optical uniformity, large size and higher utilization rate is finally obtained.
Description
technical field [0001] The invention relates to the technical field of nonlinear crystal materials, in particular to a large-size X-plane KTP crystal and a growth method thereof. Background technique [0002] Potassium titanyl phosphate (KTiOPO 4 , referred to as KTP) has excellent nonlinear optical properties, its nonlinear optical coefficient is large, the acceptance angle is wide, it is not easy to deliquescence, and the optical damage threshold can reach GW / cm 2 It has good thermal stability of magnitude and phase matching, and is one of the best materials for 1.06μm frequency doubling of small and medium power Nd:YAG lasers. In fact, it was found that the large electro-optic coefficient and low dielectric constant of KTP make it suitable for electro-optic applications, such as modulators or Q-switches; the quality factor of electro-optic waveguides of KTP is almost twice that of any other inorganic materials, showing that Its application prospect in integrated optics ...
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IPC IPC(8): C30B29/14C30B9/12
CPCC30B29/14C30B9/12
Inventor 谭云东张婷婷杜曰强方治文
Owner SHANDONG ZHONGSHAN PHOTOELECTRIC MATERIAL CO LTD