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High-speed global exposure pixel structure for realizing intra-pixel correlated double sampling

A correlated double sampling, pixel structure technology, applied in the field of image sensors, can solve the problems of inability to achieve double sampling, increase time consumption, and reduce imaging frame rate, and achieve the effects of eliminating reset noise, increasing frame rate, and reducing time delay.

Active Publication Date: 2021-02-23
TIANJIN UNIV MARINE TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the traditional global exposure method, the five-tube (5T) active pixel structure can achieve global exposure, but due to structural reasons, the Correlated Double Sampling (CDS) operation cannot be achieved, so the noise of the obtained image is high, while the eight-tube (8T) active pixel structure The pixel structure adds electrical signal storage nodes, but CDS operation requires additional circuits, which increases time consumption and causes problems such as a decrease in imaging frame rate

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  • High-speed global exposure pixel structure for realizing intra-pixel correlated double sampling
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  • High-speed global exposure pixel structure for realizing intra-pixel correlated double sampling

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Embodiment Construction

[0019] Below in conjunction with the accompanying drawings in the present invention, the technical solution in the present invention is further clearly and completely described:

[0020] like figure 1 as shown, figure 1 A schematic diagram of the structure of a high-speed global exposure pixel that realizes intra-pixel correlated double sampling provided by the present invention, including a photodiode (PD), a reset transistor (RST), a charge transfer transistor (TX), two source followers (SF1, SF2), multi-function transistor (PC), three MOS switches (S1, S2, S3), selection transistor (SEL), two capacitors (C1, C2);

[0021] Among them, the photodiode PD is used to collect the optical signal and convert it into an electrical signal. The signal is read out to the charge-voltage conversion node (FD) through the charge transfer transistor TX. The negative electrode of the photodiode PD and the source electrode of the reset transistor RST and the charge transfer The drain of the...

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Abstract

The invention discloses a high-speed global exposure pixel structure for realizing intra-pixel correlated double sampling. The high-speed global exposure pixel structure comprises a photodiode (PD), areset transistor (RST), a charge transfer transistor (TX), two source followers (SF1 and SF2), a multifunctional transistor (PC), three MOS switches (S1, S2 and S3), a selection transistor (SEL) andtwo capacitors (C1 and C2), according to the pixel structure, intra-pixel correlated double sampling (CDS) operation can be realized, reset noise of a charge voltage conversion node (FD) is eliminated, the signal-to-noise ratio of an image is improved, and the image quality is improved; the CDS operation is realized in the pixel, so an extra CDS circuit is avoided, the time delay is reduced whilethe chip area is reduced, and the frame rate is improved; exposure and pixel assembly line operation can be achieved, that is, exposure of the next frame can be conducted in the current frame signal output process, the signal reading time is fully utilized, and the frame rate is increased.

Description

technical field [0001] The invention belongs to the field of image sensors, and in particular relates to a high-speed global exposure pixel structure for realizing intra-pixel correlated double sampling. Background technique [0002] The pixel array of the image sensor receives photons during the exposure process, and converts the light signal into an electrical signal, and the electrical signal is converted into the required image by the subsequent analog-to-digital conversion circuit and digital signal processing circuit, and then output. Generally, there are two image sensor exposure methods: drum exposure method and global exposure method. In the drum exposure method, the pixel array is exposed and read out row by row. When imaging an object with a high moving speed, the exposure time of different rows is different, and the position of the object will be different, so there will be problems of image distortion, such as For fast-moving fans, cars, etc.; in the global exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/378H04N5/235
CPCH04N23/73H04N25/75
Inventor 徐江涛陈全民高志远查万斌林鹏
Owner TIANJIN UNIV MARINE TECH RES INST