High-speed global exposure pixel structure for realizing intra-pixel correlated double sampling
A correlated double sampling, pixel structure technology, applied in the field of image sensors, can solve the problems of inability to achieve double sampling, increase time consumption, and reduce imaging frame rate, and achieve the effects of eliminating reset noise, increasing frame rate, and reducing time delay.
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[0019] Below in conjunction with the accompanying drawings in the present invention, the technical solution in the present invention is further clearly and completely described:
[0020] like figure 1 as shown, figure 1 A schematic diagram of the structure of a high-speed global exposure pixel that realizes intra-pixel correlated double sampling provided by the present invention, including a photodiode (PD), a reset transistor (RST), a charge transfer transistor (TX), two source followers (SF1, SF2), multi-function transistor (PC), three MOS switches (S1, S2, S3), selection transistor (SEL), two capacitors (C1, C2);
[0021] Among them, the photodiode PD is used to collect the optical signal and convert it into an electrical signal. The signal is read out to the charge-voltage conversion node (FD) through the charge transfer transistor TX. The negative electrode of the photodiode PD and the source electrode of the reset transistor RST and the charge transfer The drain of the...
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