Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps: providing a substrate; forming a plurality of discrete side walls on the substrate, wherein the discrete side walls comprise mask side walls and pseudo mask side walls; forming a protective layer covering the side walls and the tops of the side walls on the substrate; after the protective layer is formed, forming a mask layer on the substrate, wherein the mask layer is provided with an opening, and the opening exposes the protection layer at the top of each pseudo mask side wall; removing the protective layer at the top of each pseudo mask side wall exposed out of the opening; removing the pseudo mask side walls by taking the mask layer and the protective layer as masks;removing the mask layer and the protective layer; and patterning the substrate by taking the mask side walls as masks. According to the embodiment of the invention, the protective layer can play a role in protecting the mask side walls in the step of removing the pseudo mask side wall, so that the mask side walls are prevented from being damaged, and the limitation of the mask side wall on the process of removing the pseudo mask side wall is reduced through the protection layer, so that the process window of removing the pseudo mask side wall is enlarged.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to smaller feature sizes, metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor , MOSFET) channel length has been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The channel becomes more and more difficult, making subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE:...

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of the channel is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

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