Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, applied in the field of memory, can solve the problems of mechanical strength reduction, equipment contamination, substrate edge damage, etc., and achieve the effect of improving yield rate

Inactive Publication Date: 2021-03-09
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the etching step of removing the sacrificial layer, the etchant will cause damage to the edge of the substrate in addition to removing the sacrificial layer, so that the thickness of the clamping region at the edge of the substrate is reduced and the mechanical strength is reduced, resulting in a substrate Stuck on the wafer holder, difficult to remove, or cause the substrate edge to shatter and contaminate the equipment
Therefore, substrate edge damage is an important reason for the decrease in the yield of 3D memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0027] In addition, the directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., only is the direction with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the various figures, structurally similar elements are denoted by the sa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a three-dimensional memory and a manufacturing method thereof. The manufacturing method of the three-dimensional memory comprises the steps of forming a first stack structureon a substrate; forming a first channel hole passing through the first stack structure; forming a protective layer at least covering the edge of the substrate, wherein the protective layer is made ofmetal silicide; and forming a channel structure in the first channel hole, thereby enabling the edge of the substrate to be covered with the metal silicide as a protective layer in the etching step, preventing the edge of the substrate from being damaged by an etching agent, and improving the yield of the three-dimensional memory.

Description

【Technical field】 [0001] The invention relates to the technical field of memory, in particular to a three-dimensional memory and a manufacturing method thereof. 【Background technique】 [0002] As technology develops, the semiconductor industry is constantly looking for new production methods to allow each memory die in a memory device to have a greater number of memory cells. Among them, 3D NAND (three-dimensional) memory has become a cutting-edge three-dimensional memory technology with great development potential due to its advantages of high storage density and low cost. [0003] In 3D NAND memory, multiple levels of stacks (decks) can be stacked to increase storage density. Each stack includes a gate stack structure and a channel pillar extending through the gate stack structure, the gate stack structure is used to provide the gate conductor of the selection transistor and the storage transistor, and the channel pillar is used to provide the channel layer and the channe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27
Inventor 王恩博
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap