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Micro electric field sensing device based on electrostatic force and piezoresistive effect

An electric field sensor and piezoresistive effect technology, applied in the field of electric field sensing, can solve the problems of large volume of laser source and light receiving system, difficulty in wide-area distributed application, and high cost of optical modules, so as to reduce circuit temperature drift and reduce Effect of zero drift and improvement of measurement accuracy

Active Publication Date: 2021-03-16
TSINGHUA UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such devices are often susceptible to environmental influences, such as low temperature stability, and high cost of optical modules, making it difficult to achieve large-scale wide-area distributed applications
In addition, the laser source and light receiving system are bulky, and the difficulty of equipment maintenance is also a problem for this type of sensor.

Method used

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  • Micro electric field sensing device based on electrostatic force and piezoresistive effect
  • Micro electric field sensing device based on electrostatic force and piezoresistive effect
  • Micro electric field sensing device based on electrostatic force and piezoresistive effect

Examples

Experimental program
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Effect test

Embodiment 1

[0039] In an electric field environment, induced charges are generated inside the metal thin film 2, and under the action of electrostatic force, it vibrates freely up and down together with the semiconductor thin film 1. The electrostatic force on the thin film is:

[0040]

[0041] Among them, F e is the size of the electrostatic force, A is the area of ​​the film, and E is the size of the electric field. The equation of motion of the film is:

[0042]

[0043] Among them, m is the mass of the film, g is the acceleration due to gravity, k is the spring stiffness coefficient, C is the air resistance coefficient, and ρ is the air density. According to the equation of motion, the change of the film displacement with time can be obtained, so as to obtain the strain of the piezoresistive material 5 and the change of the resistance of the piezoresistive material 5 .

[0044] The simulation analysis on the finite element data platform shows that the displacement of the film...

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PUM

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Abstract

A micro electric field sensing device based on an electrostatic force and a piezoresistive effect comprises a semiconductor film which is placed in a horizontal direction and can vibrate freely in a vertical direction. A substrate is arranged below the semiconductor film, the semiconductor film is connected with the substrate through an insulating layer, the middle area of the semiconductor film is covered with a metal film, a metal electrode is arranged in the peripheral area of the semiconductor film, the metal film is grounded or connected with a power supply through the metal electrode, the middle area of the semiconductor film is connected with the peripheral fixed part through a semiconductor spring, and piezoresistive materials are arranged on the semiconductor spring. The piezoresistive materials are connected through the metal electrode to form a Wheatstone bridge structure. The micro electric field sensing device is small in size, high in integration degree, high in resolution ratio, large in response, wide in measurement amplitude range and capable of achieving non-invasive measurement of a direct-current electric field and a time-varying electric field in different testenvironments.

Description

technical field [0001] The invention relates to the field of electric field sensing, in particular to a miniature electric field sensing device based on electrostatic force and piezoresistive effect for electric field measurement with small volume and high integration, so as to realize non-invasive measurement of voltage. Background technique [0002] The development of the ubiquitous power Internet of Things and digital grid has become an important direction for the development of today's energy industry, especially the power industry. The Ubiquitous Power Internet of Things builds a supporting information network on the basis of the existing power network to realize real-time monitoring of the operating status of the power system and fault prediction and diagnosis of power equipment and networks, thereby realizing the intelligence of the power energy network. and transparency. For the architecture of information network, high-performance sensor nodes are an important corn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/12
CPCG01R29/12
Inventor 何金良胡军韩志飞余占清
Owner TSINGHUA UNIV
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