Micro electric field sensing device based on electrostatic force and piezoresistive effect
An electric field sensor and piezoresistive effect technology, applied in the field of electric field sensing, can solve the problems of large volume of laser source and light receiving system, difficulty in wide-area distributed application, and high cost of optical modules, so as to reduce circuit temperature drift and reduce Effect of zero drift and improvement of measurement accuracy
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[0039] In an electric field environment, induced charges are generated inside the metal thin film 2, and under the action of electrostatic force, it vibrates freely up and down together with the semiconductor thin film 1. The electrostatic force on the thin film is:
[0040]
[0041] Among them, F e is the size of the electrostatic force, A is the area of the film, and E is the size of the electric field. The equation of motion of the film is:
[0042]
[0043] Among them, m is the mass of the film, g is the acceleration due to gravity, k is the spring stiffness coefficient, C is the air resistance coefficient, and ρ is the air density. According to the equation of motion, the change of the film displacement with time can be obtained, so as to obtain the strain of the piezoresistive material 5 and the change of the resistance of the piezoresistive material 5 .
[0044] The simulation analysis on the finite element data platform shows that the displacement of the film...
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