A method for optimizing the magnetic properties of cobalt-based magnetic thin film inductor materials

A technology of magnetic film and magnetic properties, applied in the application of magnetic film to substrate, inductance/transformer/magnet manufacturing, circuits, etc., can solve the problems of thick magnetic layer, many periodicities, and limiting the ability to control the magnetic properties of thin films. , to achieve the effect of low cost, convenient control and high efficiency

Active Publication Date: 2022-05-27
山东麦格智芯机电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the periodicity of the multilayer film [CoZrTa / MO]n, and the thickness of the magnetic layer is relatively thick, generally more than 50-200nm, which limits the ability of the macro-process to control the magnetic properties of the film.

Method used

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  • A method for optimizing the magnetic properties of cobalt-based magnetic thin film inductor materials
  • A method for optimizing the magnetic properties of cobalt-based magnetic thin film inductor materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] S1. Clean the surface of the CoZrTa target, and the specific cleaning process is as follows:

[0030] (1) ultrasonic cleaning with acetone alcohol first;

[0031] (2) ultrasonic cleaning with deionized water;

[0032] (3) Finally blow dry by nitrogen.

[0033] S2. Using the magnetron sputtering method, deposit CoZrTa and Al on the silicon substrate in turn 2 O 3 , forming CoZrTa / Al 2 O 3 Structure; first CoZrTa target bombardment for 2 minutes and 50 seconds, then Al 2 O 3 The target was bombarded for 7 minutes and 48 seconds, and the background vacuum of the sputtering chamber was 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0034] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment, and the process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature was 250°C, and the holding time was 30 minutes.

Embodiment 2

[0036] S1. Clean the surface of the CoZrTa target, and the specific cleaning process is as follows:

[0037] (1) ultrasonic cleaning with acetone alcohol first;

[0038] (2) ultrasonic cleaning with deionized water;

[0039] (3) Finally blow dry by nitrogen.

[0040] S2. Using the magnetron sputtering method, deposit CoZrTa and Al on the silicon substrate in turn 2 O 3 , forming CoZrTa / Al 2 O 3 Structure; first CoZrTa target bombardment for 2 minutes and 50 seconds, then Al 2 O 3 The target was bombarded for 7 minutes and 48 seconds, and the background vacuum of the sputtering chamber was 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0041] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment, and the process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature was 350°C, and the holding time was 30 minutes.

Embodiment 3

[0043] S1. Clean the surface of the CoZrTa target, and the specific cleaning process is as follows:

[0044] (1) ultrasonic cleaning with acetone alcohol first;

[0045] (2) ultrasonic cleaning with deionized water;

[0046] (3) Finally blow dry by nitrogen.

[0047] S2. Using the magnetron sputtering method, deposit CoZrTa and Al on the silicon substrate in turn 2 O 3 , forming CoZrTa / Al 2 O 3 Structure; first CoZrTa target bombardment for 2 minutes and 50 seconds, then Al 2 O 3 The target was bombarded for 7 minutes and 48 seconds, and the background vacuum of the sputtering chamber was 1×10 -5 Pa, the argon pressure during sputtering is 0.3Pa;

[0048] S3. After the deposition is completed, the sample is subjected to vacuum heat treatment, and the process is: the vacuum degree is 1×10 -5 Pa, the heat treatment temperature was 450°C, and the holding time was 30 minutes.

[0049] figure 1 For the magnetic properties of the sample, the thickness of the interface mag...

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Abstract

The invention discloses a method for optimizing the magnetic performance of a cobalt-based magnetic thin film inductance material, which belongs to the technical field of information storage and inductance. The technical solution of the present invention induces the change of the interface structure by subjecting the deposited sample to heat treatment at an appropriate temperature in a vacuum environment. Adjust the orbital structure at the ferromagnetic / nonmagnetic (Co-based soft magnetic material / MO) interface through the Co-O orbital hybridization strength at the interface, and obtain a beneficial and moderate Co-O orbital hybridization state, and then regulate The magnetic properties of ferromagnetic thin film materials have the advantages of simple process, convenient control, high efficiency, and low cost, and are suitable for application in future information storage and inductance technologies.

Description

technical field [0001] The invention belongs to the technical field of information storage and inductance, and in particular relates to a method for adjusting the Co-based soft magnetic / nonmagnetic interface structure by adjusting the intensity of Co-O orbital hybridization, thereby optimizing the magnetic properties of the thin film. Background technique [0002] In recent years, with the rapid development of electronic information technology, the arrival of the 5G era not only provides great convenience for people's production and life, such as the application of smart home, unmanned driving, wearable devices, etc., but also makes the receiving equipment of information terminals welcome The huge innovation in the past has put forward higher requirements for the performance, reliability, miniaturization and energy saving of advanced electronic components such as magnetic sensors, inductors, and transformers. Therefore, it is necessary to continuously improve the soft magnet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/18H01F41/22
CPCH01F41/18H01F41/183H01F41/22
Inventor 徐秀兰于广华冯春
Owner 山东麦格智芯机电科技有限公司
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