SiC and Si hybrid three-level ANPC inverter modulation circuit

A modulation circuit and three-level technology, which is applied in high-efficiency power electronic conversion, electrical components, and conversion of AC power input to DC power output, can solve problems such as unbalanced SiC MOSFET loss distribution, and achieve on-state loss and high efficiency. Effect
CN112532092AActive Publication Date: 2021-03-19HOHAI UNIV

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HOHAI UNIV
Publication Date
2021-03-19

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a SiC and Si hybrid three-level ANPC inverter modulation circuit, belongs to the technical field of power electronics, designs a novel SiC and Si hybrid scheme and a corresponding modulation strategy for solving the problem of unbalanced loss distribution among SiC devices of an existing SiC and Si hybrid three-level ANPC inverter, and provides a novel SiC and Si hybrid three-level ANPC inverter modulation circuit based on the full utilization of the performance advantages of the SiC devices. According to the technical scheme, the on-state loss is comprehensively considered while all switching losses are borne, the on-state loss and the off-state loss are distributed on different SiC devices, a better loss balancing effect is achieved, the on-state loss is optimizedby adopting a double-current path at the main zero level, and the efficiency of the inverter is further improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of power electronics, in particular to a SiC and Si hybrid three-level ANPC inverter modulation circuit. Background technique

[0002] Power electronic converters have always pursued high efficiency, high power density and high reliability. Converters based on traditional Si devices are limited by the performance bottleneck of Si devices themselves, and it is difficult to greatly improve power and efficiency. Compared with full SiC The converter of the device, the hybrid converter of SiC and Si devices, takes performance and cost into consideration. The three-level ANPC circuit has become a hot research object in the hybrid application of SiC and Si devices in recent years due to its advantages of simple structure and numerous redundant modes.

[0003] At present, most of the hybrid schemes and modulation strategies of three-level ANPC concentrate the switching loss on SiC devices, while Si devices work at ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More