Duplexer
A duplexer and filter technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of not being able to meet the 5G communication frequency, increase the difficulty of processing, reduce the performance of piezoelectric materials, etc., and achieve monolithic integration and small The effects of simplification, reduction of process difficulty and improvement of resonant frequency
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Embodiment 1
[0029] Embodiment 1: as figure 1 As shown, the block diagram of the duplexer 110 disclosed in Embodiment 1, the duplexer can isolate the transmitted signal from the received signal to ensure that both reception and transmission can work normally at the same time. The duplexer includes 101-antenna, 102-shift Phaser, transmit port filter 103 and receive port filter 104 of different frequency bands.
[0030] like figure 2 Shown, the block diagram of the bandpass filter of the stacked BAW resonator. The filter is composed of a series bulk acoustic resonator 105 and a parallel bulk acoustic resonator 106. The filter is a first-order L-shaped topology, and the number of series resonators and parallel resonators can also be increased to form different orders. For bandpass filters with different topological structures, Embodiment 1 takes a first-order L-shaped topological structure as an example.
[0031] image 3 Shown is a cross-sectional view of the duplexer in Embodiment 1. ...
Embodiment 2
[0036] Embodiment 2: as Image 6 As shown, it is a cross-sectional view of a filter using a Bragg reflection layer as the acoustic reflection layer 202 .
[0037] like Figure 7 Shown are the impedance curves of 2, 3, and 4-layer stacked bulk acoustic wave resonators. It can be seen from the figure that without changing the thickness of each layer of material, as the number of stacked layers increases, the resonator’s The resonant frequency increases step by step. In view of the current higher and higher frequency band requirements, this embodiment can realize the frequency increase without changing the thickness of the piezoelectric film layer, and it is easier to achieve the matching of the resonant frequency during the construction of the duplexer. , to reduce the processing difficulty.
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