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A method to control the oxygen vacancy sequence phase of perovskite phase cobalt oxide materials

A technology of perovskite phase and cobalt oxide, applied in the field of materials, can solve the problems of complex methods and high cost

Active Publication Date: 2021-09-28
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in perovskite-type cobalt oxides, high-energy electron beams can be used to irradiate the film to generate oxygen vacancies (the electron beam is accelerated to 0.5 MeV by an electron accelerator and then bombarded on the sample surface), or through different lattice constants. The substrate adjusts the size of the lattice mismatch between the substrate and the film, thereby realizing the adjustment of the sequence phase of oxygen vacancies in the film, but these methods are relatively complicated and costly, so it is urgent to explore the production and manipulation of oxygen vacancies New Means and Methods of Sequencing

Method used

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  • A method to control the oxygen vacancy sequence phase of perovskite phase cobalt oxide materials
  • A method to control the oxygen vacancy sequence phase of perovskite phase cobalt oxide materials
  • A method to control the oxygen vacancy sequence phase of perovskite phase cobalt oxide materials

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Embodiment 1

[0041] (1) Utilize traditional methods to prepare TEM section samples:

[0042] Use epoxy resin glue (M-bond 610) to grow on Nb-doped SrTiO 3 LaCoO on substrate 3 The film was bonded to a Si wafer with a clean surface and heated for 3 hours. After the glue is firm, it is cut into long and thin strips with a length of 3mm and a width of 0.6mm. Grinding and polishing the slender strips with diamond sandpaper until the thickness of the slender strips is below 3 μm. Using ion thinning equipment, the sample is further thinned to ensure that the final thickness of the film is between 30-70nm. Then put it on one end of the transmission electron microscope sample rod and fix it. Then, the electrochemically etched metal tungsten tip was fixed on the moving end of the sample rod, so that the “W tip, LaCoO 3 Thin film, 0.7% Nb:SrTiO 3 substrate" sandwich structure.

[0043] (2) Drive the metal W needle tip through piezoelectric ceramics to apply a force of 4GPa to the sample, and ...

Embodiment 2

[0049] (1) Utilize traditional methods to prepare TEM section samples:

[0050] Use epoxy resin glue (M-bond 610) to grow on Nb-doped SrTiO 3 LaCoO on substrate 3 The film was bonded to a Si wafer with a clean surface and heated for 3 hours. After the glue is firm, it is cut into long and thin strips with a length of 3mm and a width of 0.6mm. Grinding and polishing the slender strips with diamond sandpaper until the thickness of the slender strips is below 3 μm. Using ion thinning equipment, the sample is further thinned to ensure that the final thickness of the film is between 30-70nm. Then put it on one end of the transmission electron microscope sample rod and fix it. Then, the electrochemically etched metal tungsten tip was fixed on the moving end of the sample rod, so that the “W tip, LaCoO 3 Thin film, 0.7% Nb:SrTiO 3 substrate" sandwich structure.

[0051] (2) Drive the metal W needle tip through piezoelectric ceramics to make it contact with LaCoO 3 The film is...

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Abstract

A method for tuning the oxygen vacancy sequence phase of perovskite-phase cobalt oxide materials, including the perovskite-phase cobalt oxide ACoO in thin film form 3 Apply an electric field or apply an electric field and a stress field, so that the perovskite phase cobalt oxide film is composed of the original perovskite phase ACoO 3 Transformation into the oxygen vacancy ordered phase ACoO 2.5 ; wherein A is selected from one or more of La, Sr and Ca. By simultaneously applying an electric field and a stress field to the perovskite cobalt oxide film, a lateral oxygen vacancy sequence phase parallel to the substrate will be generated in the perovskite cobalt oxide film. By applying only an electric field to the perovskite cobalt oxide film without applying a stress field, a vertical oxygen vacancy sequence phase perpendicular to the substrate will be generated in the perovskite phase cobalt oxide film, and at the same time, in the vertical oxygen vacancy sequence phase There will be a small amount of lateral oxygen vacancies on both sides of the order phase. The oxygen vacancy sequence phase obtained by the method of the invention has great application prospects in the fields of solid oxide fuel cells, catalysts, oxygen separation membranes, gas sensors and the like.

Description

technical field [0001] The present invention relates to the field of materials. In particular, the present invention relates to methods for regulating the phase order of oxygen vacancies in perovskite-phase cobalt oxide materials. Background technique [0002] With the development of the times and the advancement of science and technology, material science is playing an increasingly important role, and the regulation and development of materials with excellent properties has always been the goal pursued by researchers. Among them, perovskite-type transition metal oxide materials have attracted extensive attention in the fields of catalysis, gas sensors, oxygen separation membranes, and solid oxide fuel cell electrode materials due to their high oxygen ion migration activity. The migration and transport of oxygen ions has also become the core process of the work of perovskite transition metal oxides. [0003] In perovskite-type transition metal oxides, the efficiency of oxy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G51/04
CPCC01G51/04C01P2002/34C01P2002/54C01P2002/80C01P2004/04
Inventor 朱亮王立芬许智王文龙白雪冬
Owner INST OF PHYSICS - CHINESE ACAD OF SCI