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Piezoelectric performance test method and structure

A piezoelectric performance and test structure technology, applied in the field of testing, can solve the problems of limited accuracy of table top and fixture accuracy, inability to obtain the performance related to ultra-micro film structure, and complex test system, so as to reduce labor costs. frequency interference, conducive to signal detection, and easy operation.

Active Publication Date: 2021-03-26
RUISHENG NEW ENERGY DEV CHANGZHOU +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the accuracy of the test in related technologies is limited by the surface shape of the table and the accuracy of the fixture
Among them, the detection mostly uses optical solutions to obtain the amplitude, the test system is complex and expensive, and reflection, refraction, loss, etc. need to be considered
When the film structure is an ultra-fine film structure, the test spot size is limited, and the performance related to the ultra-fine film structure cannot be obtained.

Method used

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  • Piezoelectric performance test method and structure
  • Piezoelectric performance test method and structure
  • Piezoelectric performance test method and structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This implementation mode is the first embodiment, please also refer to Figure 2-3 As shown, Embodiment 1 provides a piezoelectric performance testing structure 100 . The piezoelectric performance testing structure 100 applies the piezoelectric performance testing method.

[0040] Specifically, the piezoelectric performance testing structure 100 includes a substrate 4 having a cavity 40 , a piezoelectric layer 1 , and an upper electrode 2 and a lower electrode 3 attached to opposite sides of the piezoelectric layer 1 . Wherein, the piezoelectric layer 1 is a piezoelectric film.

[0041] The piezoelectric layer 1 , the upper electrode 2 and the lower electrode 3 form an integrated structure, and the integrated structure is connected to the substrate 4 through the lower electrode 3 and suspended above the cavity 40 . That is, the integral structure is located on one side of the cavity 40 along the thickness direction of the piezoelectric performance testing structure 10...

Embodiment 2

[0052] Please also see Figure 5-6 As shown, the present invention also provides another piezoelectric performance testing structure 200, and the piezoelectric performance testing method is applied to both the piezoelectric performance testing structure 200 and the piezoelectric performance testing structure 100.

[0053] The difference between the piezoelectric performance testing structure 200 and the piezoelectric performance testing structure 100 is that the electrodes in the piezoelectric performance testing structure 200 are at the same axial end of the piezoelectric film.

[0054] Specifically, the piezoelectric performance testing structure 200 includes a substrate 4a having a cavity 40a, a piezoelectric layer b, and a plurality of electrode layers c attached to opposite sides of the piezoelectric layer b at intervals. Wherein, the electrode layer c has two layers and includes an upper electrode layer 1c, a middle electrode layer 2c and a lower electrode layer 3c.

[...

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PUM

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Abstract

The invention discloses a piezoelectric property testing method. The method comprises the following steps: S1, inputting an alternating current signal to a signal input end of a to-be-tested sample; S2, enabling the to-be-detected sample to deform through an inverse piezoelectric effect through the input alternating current signal, and converting the deformation of the to-be-detected sample into an electric signal to be output; S3, acquiring an output electric signal of a signal output end of the to-be-detected sample, wherein the output electric signal is generated by the piezoelectric film through a direct piezoelectric effect; and S4, performing signal amplification or signal processing on the output electric signal to obtain a piezoelectric coefficient of the piezoelectric film. The invention further discloses two piezoelectric property testing structures. Compared with the prior art, the piezoelectric property testing method and the piezoelectric property testing structure are simple in structure and easy to test.

Description

【Technical field】 [0001] The invention relates to the technical field of testing, in particular to a piezoelectric performance testing method and a piezoelectric performance testing structure applied to piezoelectric performance testing of piezoelectric materials. 【Background technique】 [0002] Piezoelectric materials are widely used in various fields, such as piezoelectric transducers, piezoelectric sensors, piezoelectric drivers, filters, resonators, etc. With the development of semiconductor processing technology and the diversified needs of wireless terminals, MEMS piezoelectric microphones, MEMS piezoelectric speakers, SAW, and FBAR are gradually becoming commercial products. In order to meet the miniaturization, low power consumption, and high performance requirements of piezoelectric MEMS devices, the above-mentioned devices often adopt a piezoelectric film layer structure (that is, a piezoelectric material film), and the piezoelectric coefficient is an important ind...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/22
CPCG01R29/22
Inventor 沈宇占瞻童贝石正雨
Owner RUISHENG NEW ENERGY DEV CHANGZHOU