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Power Modules and Memory

A power module and latch technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of power module output voltage change, output voltage drop, affecting module work, etc., to reduce drop, prevent The effect of an error

Active Publication Date: 2022-04-12
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the working process of the DRAM chip, various operation modes will be switched frequently. Under different operation modes, the current drawn by each functional module will be different, resulting in changes in the output voltage of the power module.
For example, in low power consumption mode, when a heavy load occurs suddenly, the output voltage of the power module will be pulled down quickly, and the voltage module will start boosting with a certain delay. During this delay time, there is no energy supply. The output voltage of the voltage module continues to decrease, resulting in a large undershot of the output voltage, which affects the subsequent work of other modules

Method used

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Embodiment Construction

[0066] As mentioned in the background, the response of the power module in the prior art is slow, which easily leads to the problem of unstable output voltage.

[0067] Please refer to Figure 1a , is a schematic structural diagram of a prior art power module.

[0068] The power supply module includes: a charge pumping circuit 102, the power supply output terminal Vout is used to output the power supply voltage to the load, the power supply output terminal Vout is connected to a resistor R1 and a resistor R2 connected in series to the ground, and the resistor R1 and the resistor R2 serve as A voltage divider circuit, the connection terminals of the two are connected to the negative input terminal of the comparator CMP1, the positive input terminal of the comparator CMP1 is connected to the reference voltage Vref, and the output terminal of the comparator CMP1 is connected to an oscillator 101, through The output terminal of the oscillator 101 is connected to the charge pumping...

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Abstract

The present invention relates to a power supply module and a memory. The power supply module includes: a booster unit, which has a power supply output terminal, used to output a power supply voltage; an enabling unit, connected to the power supply output terminal, and used to output a Enable signal, when the voltage at the output terminal of the power supply drops to a set value, the enable signal generates a rising edge; the control unit includes: an oscillator and an acceleration unit, the output of the oscillator and the enable unit The oscillator is triggered by the rising edge of the enable signal to generate a pulse control signal; the acceleration unit is connected to the oscillator, and the control terminal of the acceleration unit is connected to the enable The output terminal of the unit, the acceleration unit is used to advance the time when the oscillator outputs the pulse control signal; the output terminal of the control unit is connected to the boost unit for controlling the boost unit to increase the output power supply voltage. The transient response capability of the above power module is improved.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a power supply module and a memory. Background technique [0002] Various power modules are required in the DRAM chip, such as charge pumps, linear regulators, etc., for different functional modules (such as word line drive voltage VPP, back gate bias voltage VBB, bit line precharge voltage VCC / 2, etc.) powered by. During the working process of the DRAM chip, various operating modes are frequently switched. Under different operating modes, the current drawn by each functional module will be different, resulting in changes in the output voltage of the power module. For example, in low power consumption mode, when a heavy load occurs suddenly, the output voltage of the power module will be pulled down quickly, and the voltage module will start boosting with a certain delay. During this delay time, there is no energy supply. The output voltage of the voltage module continues to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4074G11C11/4078
CPCG11C11/4074G11C11/4078
Inventor 季汝敏
Owner CHANGXIN MEMORY TECH INC