Vapor deposition method for preparing an amorphous lithium borosilicate
A technology of lithium borosilicate and amorphous boron, applied in electrode manufacturing, lithium storage battery, final product manufacturing, etc.
Active Publication Date: 2021-03-30
ILIKA TECH LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, it is considered impossible to prepare this composition using a vapor deposition method at a low temperature below 180°C
When the composite is applied to lithium-containing electrodes or electrolytes, there are disadvantages in using such high temperatures in the preparation of the composite because the melting point of lithium is about 180.5°C
Method used
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Embodiment 1
[0198] In this example, lithium borosilicate was deposited on a substrate using the process of the present invention. Several samples were prepared, each containing different atomic percentages of lithium, boron and silicon. For each of the samples prepared using the vapor deposition method described herein, the rate of the source was adjusted such that the composition of the resulting film had between 70 and 79.5 atomic percent lithium, between 8.3 and 18.9 atomic percent boron, and Silicon between 8.3 and 15.3 atomic %, disregarding the contribution of oxygen to the stoichiometry of the material and assuming it is present in an amount suitable to maintain electrical neutrality.
[0199] Throughout the deposition process, the substrate on which the elements are impinged is maintained at a constant temperature between 80 and 110° C. using a heating element located behind the substrate on which the film is grown. A comparative example (sample E) was prepared by depositing elem...
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Abstract
The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron and a source of silicon, and, optionally, a source of at least one dopant element; providing a substrate at a temperature of less than about 180 DEG C; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8*10<-8> m<3> / s; and co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound.
Description
technical field [0001] The present invention relates to a process for the preparation of amorphous lithium borosilicate or doped lithium borosilicate compounds by vapor deposition. Background technique [0002] Due to the many applications of thin films, depositing materials in thin films is very valuable and a range of different deposition techniques are known. Various techniques are more or less suitable for specific materials, and the quality, composition and properties of the films produced are often largely dependent on the process used for their formation. Therefore, much research is devoted to developing deposition processes capable of producing thin films suitable for specific applications. [0003] One important application of thin film materials is in solid state thin film cells or batteries such as lithium ion cells. Such batteries consist of at least three components. Two active electrodes (anode and cathode) are separated by an electrolyte. Each of these com...
Claims
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IPC IPC(8): C23C14/08C23C14/00C23C14/24C03C4/18C23C14/06H01M4/04H01M4/1391H01M10/052H01M10/0562H01M10/058
CPCC23C14/08C23C14/0021C23C14/24C03C4/18C23C14/0676H01M10/052H01M10/0562C03C3/089C03C3/064C03C3/111H01M4/134H01M4/1395H01M2300/0068Y02E60/10Y02P70/50C23C14/26C23C14/30H01M4/0423C03C4/14C03C2204/00H01M4/136H01M4/1397
Inventor G.阿雷斯塔D.M.劳夫曼B.E.海登S.格林
Owner ILIKA TECH LTD