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Organic light-emitting device, preparation method thereof and display device

An organic light-emitting device and organic technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve the problems of not being able to better improve the lifespan of organic light-emitting devices and the limited ability to filter ultraviolet rays, so as to improve the service life. , the effect of blocking damage and reducing manufacturing costs

Active Publication Date: 2021-04-13
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides an organic light-emitting device, its preparation method, and a display device, which can solve the technical problem that the UV filter film in the prior art has a limited ability to filter ultraviolet rays and cannot better improve the life of the organic light-emitting device.

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  • Organic light-emitting device, preparation method thereof and display device
  • Organic light-emitting device, preparation method thereof and display device
  • Organic light-emitting device, preparation method thereof and display device

Examples

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Embodiment 1

[0059] The preparation steps of embodiment 1 are as follows:

[0060] S11) Provide a substrate on which a thin film transistor and an anode are prepared.

[0061] S12) Prepare a light-emitting unit and a cathode on the anode.

[0062] S13) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-2.

[0063] S14) Encapsulating the entire device with an encapsulation layer.

[0064] The extinction coefficient (ABS) of the UCL-2 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 5 shown. Among them, the integral value (S ABS ) is 0.545.

[0065] Such as Figure 6 as shown, Figure 6 It is the life test curve of the organic light-emitting device 1 obtained in Example 1 of the present invention. It can be seen from the figure that after the UCL-2 material is used to prepare the barrier layer and the LiF layer is removed, th...

Embodiment 2

[0066] The preparation steps of embodiment 2 are as follows:

[0067] S21) Provide a substrate on which a thin film transistor and an anode are prepared.

[0068] S22) Prepare a light-emitting unit and a cathode on the anode.

[0069] S23) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-3.

[0070] S24) Encapsulating the entire device with an encapsulation layer.

[0071] The extinction coefficient (ABS) of the UCL-3 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 7 shown. Among them, the integral value (S ABS ) is 0.563.

[0072] Figure 8 is the life test curve of the organic light emitting device 1 obtained in Example 2 of the present invention. It can be seen from the figure that after the UCL-3 material is used to prepare the barrier layer and the LiF layer is removed, the time for the luminous efficien...

Embodiment 3

[0073] The preparation steps of embodiment 3 are as follows:

[0074] S31) Provide a substrate on which a thin film transistor and an anode are prepared.

[0075] S32) Prepare a light-emitting unit and a cathode on the anode.

[0076] S33) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-4.

[0077] S34) Encapsulating the entire device with an encapsulation layer.

[0078] The extinction coefficient (ABS) of the UCL-4 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 9 shown. Among them, the integral value (S ABS ) is 0.566.

[0079] Figure 10 is the life test curve of the organic light emitting device 1 obtained in Example 3 of the present invention. It can be seen from the figure that after the UCL-4 material is used to prepare the barrier layer and the LiF layer is removed, the time for the luminous efficie...

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Abstract

The embodiment of the invention discloses an organic light-emitting device, a preparation method thereof and a display device. The organic light-emitting device comprises an organic light-emitting unit; and a barrier layer which is arranged on the surface of one side of the organic light-emitting unit and used for blocking ultraviolet light from entering the organic light-emitting unit; wherein the integral value of the extinction coefficient ABS of the barrier layer material under the ultraviolet wavelength is SABS, wherein SABS is larger than or equal to 0.522 and smaller than or equal to 0.6. The organic light-emitting device, the preparation method thereof and the display device have the advantages that the ultraviolet barrier layer with better extinction coefficient and refractive index is adopted to replace an LIF layer, and the barrier layer has higher extinction coefficient in an ultraviolet band, so that the damage of external ultraviolet rays to the light-emitting device can be well blocked, therefore, the service life of the organic light-emitting device is prolonged, and the light extraction efficiency of the organic light-emitting device is improved at the same time according to the preparation method of the organic light-emitting device.

Description

technical field [0001] The present application relates to the field of light-emitting devices, in particular to an organic light-emitting device, a preparation method thereof, and a display device. Background technique [0002] With the progress of the times, display technology has become an indispensable technology in people's daily life. In order to meet the requirements of high contrast, low energy consumption, wide viewing angle, thin and flexible, etc., organic light-emitting diode (OLED) display technology has become a hot spot in current scientific research, and has won the favor of domestic and foreign industries. It is gradually replacing TFT-LCD and becoming the mainstream of the next generation. display technology. In 1987, Professor Deng Qingyun and Van Slyke of Kodak Company used transparent conductive film as anode, Alq3 as luminescent material, triarylamine as hole transport layer, and metal electrode as cathode to prepare the world's first OLED device (Appl....

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/85H10K50/858H10K71/00
Inventor 杨林李先杰
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD