Organic light-emitting device, preparation method thereof and display device
An organic light-emitting device and organic technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve the problems of not being able to better improve the lifespan of organic light-emitting devices and the limited ability to filter ultraviolet rays, so as to improve the service life. , the effect of blocking damage and reducing manufacturing costs
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Embodiment 1
[0059] The preparation steps of embodiment 1 are as follows:
[0060] S11) Provide a substrate on which a thin film transistor and an anode are prepared.
[0061] S12) Prepare a light-emitting unit and a cathode on the anode.
[0062] S13) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-2.
[0063] S14) Encapsulating the entire device with an encapsulation layer.
[0064] The extinction coefficient (ABS) of the UCL-2 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 5 shown. Among them, the integral value (S ABS ) is 0.545.
[0065] Such as Figure 6 as shown, Figure 6 It is the life test curve of the organic light-emitting device 1 obtained in Example 1 of the present invention. It can be seen from the figure that after the UCL-2 material is used to prepare the barrier layer and the LiF layer is removed, th...
Embodiment 2
[0066] The preparation steps of embodiment 2 are as follows:
[0067] S21) Provide a substrate on which a thin film transistor and an anode are prepared.
[0068] S22) Prepare a light-emitting unit and a cathode on the anode.
[0069] S23) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-3.
[0070] S24) Encapsulating the entire device with an encapsulation layer.
[0071] The extinction coefficient (ABS) of the UCL-3 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 7 shown. Among them, the integral value (S ABS ) is 0.563.
[0072] Figure 8 is the life test curve of the organic light emitting device 1 obtained in Example 2 of the present invention. It can be seen from the figure that after the UCL-3 material is used to prepare the barrier layer and the LiF layer is removed, the time for the luminous efficien...
Embodiment 3
[0073] The preparation steps of embodiment 3 are as follows:
[0074] S31) Provide a substrate on which a thin film transistor and an anode are prepared.
[0075] S32) Prepare a light-emitting unit and a cathode on the anode.
[0076] S33) Evaporating a barrier layer on the cathode, wherein the material of the barrier layer is UCL-4.
[0077] S34) Encapsulating the entire device with an encapsulation layer.
[0078] The extinction coefficient (ABS) of the UCL-4 material evaporated on the transparent substrate and the integral of the extinction coefficient to the wavelength (S ABS ) to the wavelength (λ) dependence as Figure 9 shown. Among them, the integral value (S ABS ) is 0.566.
[0079] Figure 10 is the life test curve of the organic light emitting device 1 obtained in Example 3 of the present invention. It can be seen from the figure that after the UCL-4 material is used to prepare the barrier layer and the LiF layer is removed, the time for the luminous efficie...
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Abstract
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