AZO material nano resistive film and preparation method thereof

Abstract

The invention discloses an AZO material nano resistive film and a preparation method thereof, and belongs to the field of device materials. The 104-1010 ohm*cm nano resistive film is widely applied to the fields of micro-channel plates, single-channel electron multiplication, drift tubes, charge dissipation and discharge and the like, but the Zn content interval (70%-73%) of the AZO material in the resistivity interval is very narrow and is difficult to regulate and control. The method comprises the following steps: 1) putting a device substrate into a reaction chamber for vacuumizing, heating the reaction chamber and keeping the temperature; 2) setting an atomic layer deposition process of Al2O3 and ZnO; 3) setting the atomic layer arrangement sequence of Al2O3 and ZnO of the doping process in a large-cycle nested small-cycle mode for growth; and 4) setting the temperature of the reaction chamber to anneal the film. In the process, the AZO material can be used for regulating, controlling and optimizing the film within the interval of 101-1010 ohm*cm.

Description

technical field [0001] The invention belongs to the field of device materials and relates to an AZO material high-resistance thin film. Background technique [0002] Atomic layer deposition technology is a controllable rate of precursor gas and reaction gas alternately entering the substrate, physical and chemical adsorption or surface saturation reaction occurs on the surface, and the material is deposited layer by layer in the form of a single atomic film on the surface of the substrate. Technology. Based on self-limiting reactions, ALD can produce continuous pinhole-free films with excellent step coverage and control over atomic-scale film thickness and composition. al 2 o 3 The atomic layer deposition technology of ZnO and ZnO is very mature, and the precursor source materials TMA and DEZ are relatively cheap compared to other precursor sources. [0003] Resistivity at 10 4 ~10 10 The Ω*cm nano-resistive film is widely used in many fields, such as the field of micr...

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Problems solved by technology

[0005] The mature resistive film is only W-Al 2 o 3 and Mo-Al 2 o 3 Both, but ALD precursor WF for growth of W or Mo 6 or MoF 6 It will cause serious pollution to the environment and is highly corrosive. The pipeline must be highly corrosion-resistant, so the requirements for atomic layer deposition equipment are very high, and the preparation price of the film is therefore high.

[0006] Resistivity at 10 4 ~10 10 When Ω*cm, the Zn content range (70%-73%) of AZO material is very narrow and difficult to control

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