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Electrostatic chuck and semiconductor process equipment

An electrostatic chuck and substrate technology, which is applied in semiconductor/solid-state device manufacturing, circuits, discharge tubes, etc., can solve the problems of low wafer edge etching efficiency and poor overall wafer uniformity.

Pending Publication Date: 2021-04-16
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention discloses an electrostatic chuck and semiconductor process equipment to solve the problem that the current limiting parts in the electrostatic chuck are usually higher than the wafer, resulting in low etching efficiency at the edge of the wafer and poor overall uniformity of the wafer. question

Method used

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  • Electrostatic chuck and semiconductor process equipment
  • Electrostatic chuck and semiconductor process equipment
  • Electrostatic chuck and semiconductor process equipment

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Embodiment Construction

[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] The technical solutions disclosed by various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] like Figure 1-Figure 6 As shown, the embodiment of the present invention discloses an electrostatic chuck capable of supporting a workpiece 500 to be processed, and the electrostatic ch...

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PUM

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Abstract

The invention discloses an electrostatic chuck and semiconductor process equipment. The electrostatic chuck comprises a supporting piece, a limiting piece and an electrode assembly; the supporting piece comprises a base body and a supporting table, the supporting table is arranged on the base body in a protruding manner, and the surface, deviating from the base body, of the supporting table comprises a bearing surface used for supporting a to-be-processed workpiece; the limiting piece is provided with a through hole, the limiting piece is supported in the base body, the supporting table extends into the through hole, the surface, deviating from the base body, of the limiting piece is higher than the bearing surface, and the inner ring wall of the through hole and the bearing surface are used for jointly positioning the to-be-machined workpiece; the electrode assembly is arranged in the supporting piece and used for providing electrostatic adsorption acting force for the limiting piece and the to-be-machined workpiece supported on the supporting table under the condition that the electrode assembly is connected with a power source. The electrostatic chuck can solve the problems that the etching efficiency of the edge of the wafer is low and the overall uniformity of the wafer is poor at present.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an electrostatic chuck and semiconductor process equipment. Background technique [0002] During the etching process of the wafer, an electrostatic chuck is usually used to apply an adsorption force to the wafer to fix the wafer, and the electrostatic chuck includes a chuck base and a stopper, and the stopper is used to hold the wafer in the horizontal direction. The position of the wafer is limited. Generally speaking, in order to ensure that the limiter has a structural strength that meets the requirements, the thickness of the limiter is usually relatively large, so that the limiter supported on the chuck base will be higher than the wafer adsorbed on the chuck base, resulting in The distribution of air flow and electromagnetic field in the reaction chamber at the edge of the wafer is different from that at the center of the wafer, which leads to lower etchin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/20H01J37/305H01J37/32H01L21/683H01L21/67
Inventor 陈兆滨光娟亮
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD