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Micro LED structure and color display device

A technology of LED structure and color display, applied in the direction of identification devices, instruments, electrical components, etc., to achieve high production efficiency and yield, improve photon utilization, and improve conversion efficiency.

Pending Publication Date: 2021-04-16
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the embodiments of the present invention is: the existing micro-LED structure realizes the color display device, which requires the use of expensive quantum dot printing equipment or complex mass transfer technology, which is inefficient and low in yield

Method used

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  • Micro LED structure and color display device
  • Micro LED structure and color display device
  • Micro LED structure and color display device

Examples

Experimental program
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no. 1 example

[0055] Please refer to figure 1 , the arrow in the figure indicates the direction of light emission. This embodiment provides a micro LED structure 100. The micro LED structure 100 includes a light emitting layer 130, a reflective layer 110 and a color selection layer 120, wherein the light emitting layer 130 is used for electroluminescence, reflective Layer 110 is on one side of light emitting layer 130 and color selection layer 120 is on the other side of light emitting layer 130 .

[0056] Specifically, the light-emitting layer 130 contains at least an electro-excitation material, and may also contain an electro-excitation material and multiple photo-excitation materials to achieve multi-wavelength excitation, wherein the electro-excitation material may be a quantum well, and the photo-excitation material may be a quantum dot.

[0057]The color selection layer 120 is used to select one color of light to pass through. The color selection layer 120 is a light wave filter inc...

no. 2 example

[0063] Please refer to figure 2 , this embodiment provides a micro-LED structure 100, the micro-LED structure 100 includes a light-emitting layer 130, a reflective layer 110 and a color selection layer 120, wherein the light-emitting layer 130 is used for electroluminescence, and the reflective layer 110 is located at the top of the light-emitting layer 130 On one side, the color selection layer 120 is located on the other side of the light emitting layer 130 .

[0064] Specifically, the light emitting layer 130 includes a quantum well layer 131 , a P-type semiconductor layer 132 , an N-type semiconductor layer 133 and a wavelength conversion material 134 .

[0065] The P-type semiconductor layer 132 is located on one side of the quantum well layer 131 , the N-type semiconductor layer 133 is located on the other side of the quantum well layer 131 , and the N-type semiconductor layer 133 is farther away from the reflective layer 110 than the P-type semiconductor layer 132 . T...

no. 3 example

[0070] Please refer to image 3 , this embodiment provides a micro-LED structure 100, the micro-LED structure 100 includes a light-emitting layer 130, a reflective layer 110 and a color selection layer 120, wherein the light-emitting layer 130 is used for electroluminescence, and the reflective layer 110 is located at the top of the light-emitting layer 130 On one side, the color selection layer 120 is located on the other side of the light emitting layer 130 .

[0071] Specifically, the light emitting layer 130 includes a quantum well layer 131 , a P-type semiconductor layer 132 , an N-type semiconductor layer 133 and a wavelength conversion material 134 .

[0072] The P-type semiconductor layer 132 is located on one side of the quantum well layer 131 , and the N-type semiconductor layer 133 is located on the other side of the quantum well layer 131 . The quantum well layer 131 is used for electroluminescence, and the quantum well layer 131 can excite at least one short wave...

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Abstract

The embodiment of the invention provides a micro LED structure and a color display device, and relates to the technical field of display. The color display device comprises a plurality of the micro LED structures. The micro LED structure comprises a light-emitting layer, a reflecting layer and a color selection layer; the light-emitting layer at least comprises an electric excitation material and / or an optical excitation material to achieve multi-wavelength excitation, the reflecting layer is located on one side of the light-emitting layer, the color selection layer is located on the other side of the light-emitting layer, and the color selection layer is used for selecting light of one color to transmit. The micro LED structure is applied to the color display device and can be prepared by being compatible with a semiconductor process, expensive quantum dot printing equipment and a complex huge transfer technology are not needed, and the production efficiency and the rate of finished products are higher.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a micro LED structure and a color display device. Background technique [0002] Micro LED is a light-emitting diode through the micron scale. As a self-luminous display device, the array of pixel units composed of micro-LEDs has excellent characteristics such as high brightness, long life, high resolution, and fast response rate compared with OLED display devices, and has attracted more and more attention in recent years. [0003] Colorization is one of the key technologies of display technology. From the analysis of the existing public technology development status, there are two main schemes for the colorization of micro-LED display devices. One is to assemble micro-LEDs with RGB three primary colors into a colorized display array, and micro-LEDs with different color bands emit different colors. The light in the color band realizes color display; the second solution is to us...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/10H01L33/26H01L33/50G09F9/33
Inventor 刘久澄龚政郭婵潘章旭王建太邹胜晗龚岩芬陈志涛
Owner GUANGDONG INST OF SEMICON IND TECH
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