Silicon micro-pillar array three-electrode ionization mems electric field sensor and preparation method

A technology of electric field sensor and micro-column, which is applied in the field of electric field sensing, can solve the problems of unseen sensor research results and reports, and achieve the effects of strong bombardment resistance, high detection accuracy and wide detection range

Active Publication Date: 2022-08-09
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no report on the research results of this type of sensor at home and abroad.

Method used

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  • Silicon micro-pillar array three-electrode ionization mems electric field sensor and preparation method
  • Silicon micro-pillar array three-electrode ionization mems electric field sensor and preparation method
  • Silicon micro-pillar array three-electrode ionization mems electric field sensor and preparation method

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preparation example Construction

[0046] The preparation method of the silicon micro-pillar array three-electrode ionized MEMS electric field sensor of the present invention adopts the following steps:

[0047] 1) Pretreatment before deep silicon etching: Three electrode silicon wafers etched with small through holes, lead-out holes and deep grooves are selected as the substrate, and pretreatment of deep silicon etching is carried out before cleaning, gluing, and exposure;

[0048] 2) Silicon micro-pillar array etching: The sensor silicon micro-pillar array is prepared by the deep reactive ion etching DRIE method based on the alternating reciprocating Bosch process; in the Bosch process, etching and passivation are alternately performed until the etching depth requirement is reached .

[0049] In continuous access to SF 6 protective gas, C 4 F 8 Under the condition of etching gas for 2 to 15s, set the pressure to 6Pa, the radio frequency power to 20 to 70W, the source power to 220 to 450W, C 4 F 8 with SF...

Embodiment 1

[0054] There are 9 small through holes on the electrode of the first electrode, the aperture is set at 1.2mm, and the ratio of the distance between the first electrode and the second electrode to the small through hole is 1 / 16; the second electrode has 9 small through holes from the center Small lead-out hole, the diameter of the small lead-out hole is 1.2mm, the ratio of the distance between the first electrode and the second electrode, between the second electrode and the third electrode and the diameter of the small lead-out hole is 1 / 16; The second electrode is prepared with a silicon micro-pillar array structure with an interval of 20 μm, a diameter of 10 μm and a height of 60 μm, and the silicon micro-array structures of the two electrodes are opposite to each other; the third electrode is provided with a deep groove, the side of the deep groove is The length is 6×8 mm, the depth is 200 μm, and the ratio of the electrode spacing between the second electrode and the third ...

Embodiment 2

[0070]The basic structure of this embodiment is the same as that of Embodiment 1, the difference is that there are 16 small through holes on the electrode of the first electrode, the diameter of which is set at 0.6 mm, the distance between the first electrode and the second electrode and the small through holes The ratio of the aperture is 1 / 600; the second electrode has 16 small extraction holes from the center, the aperture of the small extraction hole is 0.5mm, and the ratio of the electrode spacing between the first electrode and the second electrode to the aperture of the small extraction hole is 1 / 600; the ratio of the electrode spacing between the second electrode and the third electrode to the diameter of the small lead-out hole is 1 / 500; the first electrode and the second electrode are prepared with silicon microns with an interval of 10 μm, a diameter of 5 μm, and a height of 10 μm Column array structure, the silicon micron column array structure of the two electrode...

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Abstract

The invention discloses a three-electrode ionization type MEMS electric field sensor of silicon micro-pillar array and a preparation method, comprising three first, second and third electrodes distributed in sequence from bottom to top, the first electrode is distributed on the inner surface and adopts The silicon substrate of the silicon micro-pillar array prepared by the deep silicon etching method and the cathode with small through holes are formed; the second electrode is formed by the silicon micro-pillar array on one side and the lead-out pole with small lead-out holes; the third electrode is composed of inner It consists of collector electrodes with deep grooves on the surface; the three electrodes are isolated from each other by insulating struts. Based on the field emission ionization mechanism, the sensor detects the electric field intensity by detecting the output current. Compared with the prior art, the sensor has a wide range, high resolution and high accuracy, and can detect the electric field intensity of direct current, alternating current and pulse.

Description

technical field [0001] The invention relates to the field of electric field sensing, in particular to an electric field sensor which can be sensitive to electrostatic field, alternating electric field and pulse electric field based on silicon micron column array and gas discharge principle. Background technique [0002] Electric field sensors have important and extensive applications in aerospace, national defense, smart grid, petrochemical, industrial production, meteorology, and scientific research and many other fields. Especially in the aerospace field, satellites can only be launched when the electric field strength is below a certain critical value. Many facts show that a strong gas field can cause the launch to fail. Strengthening electric field monitoring has become one of the important decision-making bases for the launch of satellites and other spacecraft. With the development of my country's aerospace, smart grid and other fields, the requirements for the sensit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R29/08G01R29/12
Inventor 张勇程珍珍王迪唐宇杰孙利利郝云鹤周锦堂章凯王睿哲邓元刚朱程鹏赵宇王振宇何轩韩文杨彬吴健耿明昕
Owner XI AN JIAOTONG UNIV
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