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MOSFET gate crosstalk clamping circuit, control method and controller

A technology of clamping circuit and MOS tube, which is applied in the direction of circuit devices, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc.

Pending Publication Date: 2021-04-20
SHENZHEN INOVANCE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a MOSFET gate crosstalk clamping circuit, control method and controller, aiming to solve the technical problem of suppressing SiC MOSFET crosstalk voltage

Method used

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  • MOSFET gate crosstalk clamping circuit, control method and controller
  • MOSFET gate crosstalk clamping circuit, control method and controller
  • MOSFET gate crosstalk clamping circuit, control method and controller

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Embodiment Construction

[0033] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0034] The embodiment of the present invention provides a MOSFET gate crosstalk clamping circuit, refer to figure 1 , figure 1 It is a structural schematic diagram of an embodiment of the MOSFET gate crosstalk clamping circuit of the present invention.

[0035] It should be noted that the MOSFET gate crosstalk clamping circuit of the present invention is applicable to either the upper-side MOSFET or the lower-side MOSFET. In this embodiment, the MOSFET gate crosstalk clamping circuit is set on the lower side as an example for illustration. In specific implementation, it is not limited that the MOSFET gate crosstalk clamping circuit is used in the upper bridge or the lower bridge.

[0036] In an embodiment of the MOSFET gate crosstalk clamping circuit of the present invention, the MOSFET gate crosstalk clamping circu...

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Abstract

The invention relates to the technical field of electric control, and in particular relates to an MOSFET gate crosstalk clamping circuit, a control method and a controller. The circuit comprises an MOSFET driving unit, an anti-interference unit and a driving chip; the gate pole of the MOSFET driving unit is connected with the first driving end of the driving chip, the first end of the anti-interference unit is connected with the gate pole of the MOSFET driving unit, and the second end of the anti-interference unit is connected with the negative pressure end or the grounding end of the driving chip; the anti-interference unit is used for receiving crosstalk voltage caused in the switching process of the MOSFET; and the driving chip is used for controlling the anti-interference unit to reduce the crosstalk voltage. The gate electrode of the MOSFET driving unit is isolated and clamped through the circuit, and the crosstalk voltage of the gate electrode is effectively suppressed.

Description

technical field [0001] The invention relates to the technical field of electric control, in particular to a MOSFET gate crosstalk clamping circuit, a control method and a controller. Background technique [0002] Taking the half-bridge circuit as an example, when the upper bridge IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) / MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) is turned on, the The dv / dt (voltage change rate) of the lower bridge will generate a displacement current on the IGBT / MOSFET Miller capacitance of the lower bridge, and the displacement current will flow to the ground through the drive resistor, causing the gate voltage to rise. If the raised voltage is greater than that of the IGBT / MOSFET If the turn-on threshold is lower, the lower bridge IGBT / MOSFET will be turned on for tens or hundreds of nanoseconds, causing additional switching losses, which may lead to overh...

Claims

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Application Information

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IPC IPC(8): H02H9/04
Inventor 刘璐张太之
Owner SHENZHEN INOVANCE TECH