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Apparatus and method for valley bottom locking in quasi-resonant switching power supply

A switching power supply and quasi-resonance technology, which is applied in the direction of output power conversion devices, electrical components, and adjustment of electrical variables, can solve problems such as large audio noise and output ripple, failure of the valley lock state, and large feedback voltage fluctuations. Reduce audio noise, improve conducted electromagnetic interference, and reduce the effect of feedback voltage foldback

Active Publication Date: 2021-04-23
ON BRIGHT ELECTRONICS SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing methods for valley locking will generate a large frequency difference and feedback voltage foldback when cutting the valley, which will easily cause large fluctuations in the feedback voltage and the risk of failure of the valley locking state, resulting in low-frequency unwanted Periodic adjacent valley switching states generate large audio noise and output ripple. This problem is more prominent in quasi-resonant switching power supplies with small volume, high frequency and high power density, and needs to be solved urgently

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Embodiment Construction

[0034] Features and exemplary embodiments of various aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. Example implementations may be embodied in many forms and should not be construed as limited to the implementations set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example implementations to this disclosure. field technicians. In the drawings, the dimensions of regions and components may be exaggerated for clarity. Also, in the drawings, the same reference numerals denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0035] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of the embo...

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Abstract

The invention relates to an apparatus and a method for valley bottom locking in a quasi-resonant switching power supply. The apparatus for valley bottom locking in the quasi-resonant switching power supply includes: an encoding module for generating an encoded signal based on a received input signal; and a valley bottom locking state generation module used for generating a valley bottom locking state of a power tube in the quasi-resonant switching power supply based on the coded signal, wherein the valley bottom locking state indicates a valley bottom position where a drain resonance voltage of the power tube is located when the power tube is conducted, the valley bottom locking state comprises full conduction at the Nth valley bottom, partial conduction at the Nth valley bottom, partial conduction at the (N + 1)th valley bottom and full conduction at the (N + 1)th valley bottom, and N is a positive integer.

Description

technical field [0001] The present disclosure relates to integrated circuits, and more particularly, to apparatus and methods for valley locking in quasi-resonant (QR) switching power supplies. Background technique [0002] With the increasing demand for switching power supplies with small size, high frequency and high power density, quasi-resonant switching power supplies with zero voltage and low voltage turn-on (for example, quasi-resonant flyback switching power supplies) are becoming more and more widely used . The transformer of the flyback converter in the quasi-resonant flyback switching power supply has a parasitic leakage inductance L leak , power transistor S1 (for example, metal oxide semiconductor field effect transistor (MOSFET), bipolar junction NPN transistor (BJT-NPN), insulated gate bipolar transistor (IGBT), and gallium nitride (GaN) transistor, etc.) , and the parasitic capacitance C between the source and drain of the power transistor S1 p ,Such as f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/335H02M1/08H02M1/44
CPCY02B70/10H02M3/01H02M3/33507H02M1/0035H02M1/0025H02M1/44H02M3/335H02M1/0003
Inventor 杨彭林林元
Owner ON BRIGHT ELECTRONICS SHANGHAI
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