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Tunable fixedly-attached bulk acoustic wave resonator

A bulk acoustic wave resonator and paste-type technology, which is applied in the field of microelectronics, can solve the problems of affecting the performance of transceivers, the inability to integrate chips, and low Q value, and achieve the effects of simple structure, good mechanical stability, and easy production

Pending Publication Date: 2021-04-23
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above methods are large in size and cannot be integrated into the chip. They can only be externally connected to the chip as discrete devices. The distribution effect of the RF circuit and other capacitance and inductance values ​​of the external components is obvious, and the Q value is very low, which greatly affects the transceiver. performance

Method used

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  • Tunable fixedly-attached bulk acoustic wave resonator
  • Tunable fixedly-attached bulk acoustic wave resonator
  • Tunable fixedly-attached bulk acoustic wave resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] like Figure 1-2 As shown, the first tunable fixed-mount BAW resonator 11 provided in Embodiment 1 includes a substrate 12 , a piezoelectric oscillation stack 13 , an acoustic reflection structure 16 and a tuning structure 15 . There is a cavity 14 in the middle of the substrate 12; the tuning structure 15 sequentially includes a first electrode 15a, a piezoelectric layer 15b and a second electrode 15c from top to bottom; the acoustic reflection layer includes a low acoustic impedance layer SiO from top to bottom 2 16a, a high acoustic impedance layer Mo16b; the piezoelectric oscillation stack 13 sequentially includes from bottom to top: a top electrode 13a, a piezoelectric layer 13b and a bottom electrode 13c.

[0034] like figure 2 As shown, in Embodiment 1, the patterned piezoelectric oscillator stack portion 13 is elliptical; in the acoustic reflection structure, the high acoustic impedance layer is Mo, and the low acoustic impedance layer is SiO 2 .

Embodiment 2

[0036] like Figure 3-4 As shown, the second tunable fixed-mounted BAW resonator 21 provided in the second embodiment includes a substrate 12 , a piezoelectric oscillation stack 13 , an acoustic reflection structure 16 and a tuning structure 15 . There is a cavity 14 in the middle of the substrate 12; the tuning structure 15 sequentially includes a first electrode 15a, a piezoelectric layer 15b and a second electrode 15c from top to bottom; the acoustic reflection layer includes a low acoustic impedance layer SiO from top to bottom 2 16a, a high acoustic impedance layer Mo16b; the piezoelectric oscillation stack 13 sequentially includes from bottom to top: a top electrode 13a, a piezoelectric layer 13b and a bottom electrode 13c.

[0037] like Figure 4 As shown, in the second embodiment, the patterned piezoelectric oscillator stack portion 13 is an irregular pentagon; in the acoustic reflection structure, the high acoustic impedance layer is Mo, and the low acoustic impedanc...

Embodiment 3

[0039] like Figure 5-6 As shown, the third tunable fixed-mounted BAW resonator 31 provided in Embodiment 3 includes a substrate 12 , a piezoelectric oscillation stack 13 , an acoustic reflection structure 16 and a tuning structure 15 . There is a cavity 14 in the middle of the substrate 11; the tuning structure 15 sequentially includes from top to bottom: a first electrode 15a, a piezoelectric layer 15b and a second electrode 15c; the acoustic reflection layer includes from top to bottom: a low acoustic impedance layer SiO 2 16a, a high acoustic impedance layer W16c; the piezoelectric oscillation stack 13 sequentially includes from bottom to top: a top electrode 13a, a piezoelectric layer 13b and a bottom electrode 13c.

[0040] like Image 6 As shown, in Embodiment 3, the patterned piezoelectric oscillator stack portion 13 is elliptical; in the acoustic reflection structure, the high acoustic impedance layer is W, and the low acoustic impedance layer is SiO 2 .

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Abstract

The invention discloses a tunable fixedly-attached bulk acoustic wave resonator which comprises a substrate, a cavity, a tuning structure, an acoustic reflection layer structure and a piezoelectric oscillation pile. The piezoelectric oscillation pile comprises a top electrode layer, a piezoelectric layer and a bottom electrode layer; the tuning structure comprises a top first electrode layer, a tuning layer and a second electrode layer, and direct-current bias voltage is applied to the first electrode and the second electrode; the acoustic reflection layer is of a Bragg reflection structure. The tunable fixed-pasting type bulk acoustic wave resonator is applied to the first electrode and the second electrode in a direct-current bias mode, and the tuning layer has the piezoelectric characteristic. Under a small direct-current bias voltage, the tuning layer deforms, so that the elastic constants of the acoustic reflection layer structure above the tuning layer and the piezoelectric oscillation pile are changed. Therefore, the frequency modulation of the film bulk acoustic resonator can be realized. Meanwhile, the SiO2 layer in the acoustic reflection layer structure can compensate the temperature drift problem of the resonator.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a tunable fixed-type bulk acoustic wave resonator. Background technique [0002] With the rapid development of wireless communication, wireless signals are becoming more and more crowded, and new requirements such as integration, miniaturization, low power consumption, high performance and low cost are put forward for filters working in the radio frequency band. The traditional SAW filter will be more and more unable to meet such standards due to the limitation of frequency and withstand power. Thin-film bulk acoustic resonators (FBARs) have gradually become a research topic in RF filters due to their high operating frequency, CMOS process compatibility, high quality factor Q value, low loss, low temperature coefficient, high power carrying capacity, integration and small size. It has been widely used in the field of wireless communication. A radio frequency filter wit...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/05H03H9/17
Inventor 孙成亮王雅馨谢英邹杨龙开祥温志伟杨超翔
Owner 武汉敏声新技术有限公司
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