Semiconductor structure and preparation method thereof

A semiconductor and trench technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increased aspect ratio and metal plugs that tend to have gaps or holes
CN112736030AInactive Publication Date: 2021-04-30CHANGXIN MEMORY TECH INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHANGXIN MEMORY TECH INC
Publication Date
2021-04-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a semiconductor structure and a preparation method thereof. According to the preparation method of the semiconductor structure, the passivation area of metal in a groove is accurately controlled through ion implantation, then the forming rate of the metal in the groove is reduced, and the forming rate of the metal in the passivation layer is controlled to be slower than that of the metal in the seed layer, so sufficient deposition of the metal in the groove can be promoted, and when the groove with a high depth-to-width ratio is filled, the defects of gaps, holes and the like can be avoided. Meanwhile, a reaction area can be directly defined through ion implantation, the forming area of the metal passivation layer can be accurately controlled, and the control capacity of the technological process is enhanced; and moreover, the metal passivation layer can be used as a barrier layer without adding a removal step, so that the preparation process is simplified.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a preparation method thereof. Background technique

[0002] With the continuous development of semiconductor technology, the feature size of semiconductor integrated circuit devices is continuously reduced. Due to the shrinkage of device size, the aspect ratio of contact holes or through holes as interconnect structures is getting larger and larger. When metal filling is performed, the top is pre-sealed before the metal fills the contact hole or via, so that the formed metal plug has defects such as gaps or holes. Contents of the invention

[0003] Based on this, it is necessary to address the problem that the aspect ratio of the contact hole or the through hole increases, and the metal plug formed when the contact hole or the through hole is directly filled with metal is likely to have defects such as gaps or holes, and to provide a semi...

Claims

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