Three-state beam source furnace shutter for molecular beam epitaxy

A technology of molecular beam epitaxy and beam source furnace, which is applied in the direction of condensed steam, crystal growth, single crystal growth, etc., can solve the problems affecting process stability and repeatability, uncontrollable evaporation beam flow, and affecting the quality of epitaxial film, etc. Achieve the effect of improving equipment production efficiency and reducing equipment maintenance time

Active Publication Date: 2021-05-04
HUNAN SEMICOREPI SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after the molecular beam epitaxy equipment has been running for a long time, the materials adsorbed on the inner wall of the cold shield continue to accumulate and gradually become thicker, eventually forming material fragments that are easy to fall off. Once these material fragments

Method used

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  • Three-state beam source furnace shutter for molecular beam epitaxy
  • Three-state beam source furnace shutter for molecular beam epitaxy

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[0017]The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0018]Figure 1 to 2One embodiment of the three-state molecular beam extension beam source furnace shutter is shown, and the three-state molecular beam extension beam is used, including shutter blades 23 in the vacuum chamber 1 for The shutter blade 23 is driven to swing and linearly extended shutter rods 22, and the shutter flange 21 for mounting the shutter rod 22. Among them, the shutter blade 23 can be circular, elliptical, water drops, square, diamond, polygon, and the like suitable shape.

[0019]The three-state molecular beam extension beam passenger furnace shutters, the shutter blade 23 can be thrown by the shutter rod 22 and the telescopic movement, when the shutter blade 23 completely avoids the stream evaporation path 4 (egfigure 1 The position shown in the middle is in the beam opening state, when the shutter blade 23 completely blocks t...

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Abstract

The invention discloses a three-state beam source furnace shutter for molecular beam epitaxy. The three-state beam source furnace shutter is characterized in that a third beam source furnace protection state is added on the basis of a beam opening state and a beam closing state, and the shutter in the beam source furnace protection state can effectively prevent material fragments adsorbed on the inner wall of a cold shield from falling into a beam source furnace. The three-state beam source furnace shutter has the advantages that the source material in the beam source furnace can be protected from being polluted by material fragments, the quality of an epitaxial film is optimized, meanwhile, the stability and repeatability of evaporation beams are effectively improved, the equipment maintenance time is shortened, and the equipment production efficiency is improved.

Description

technical field [0001] The invention relates to semiconductor equipment, in particular to a beam source furnace shutter for three-state molecular beam epitaxy. Background technique [0002] Molecular beam epitaxy (MBE) is to spray the components and doped atoms or molecules of the crystal from the beam source furnace to the substrate surface at a certain thermal movement speed and a certain composition ratio in an ultra-high vacuum environment. A method for preparing single crystal thin films by epitaxial growth. [0003] Among them, the beam source furnace and the beam source furnace shutter are important components of the molecular beam epitaxy equipment. The beam source furnace obtains a stable and controllable evaporation beam by heating the source material in the crucible. Each beam source furnace is equipped with an independent beam source furnace. Shutter, the shutter of the beam source furnace realizes the on-off control of the evaporation beam by releasing or block...

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Application Information

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IPC IPC(8): C30B23/02
CPCC30B23/02
Inventor 杜鹏龚欣付宏伟魏唯陈峰武王慧勇肖慧宁澍陈长平
Owner HUNAN SEMICOREPI SEMICON TECH CO LTD
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