Three-state beam source furnace shutter for molecular beam epitaxy

Abstract

The invention discloses a three-state beam source furnace shutter for molecular beam epitaxy. The three-state beam source furnace shutter is characterized in that a third beam source furnace protection state is added on the basis of a beam opening state and a beam closing state, and the shutter in the beam source furnace protection state can effectively prevent material fragments adsorbed on the inner wall of a cold shield from falling into a beam source furnace. The three-state beam source furnace shutter has the advantages that the source material in the beam source furnace can be protected from being polluted by material fragments, the quality of an epitaxial film is optimized, meanwhile, the stability and repeatability of evaporation beams are effectively improved, the equipment maintenance time is shortened, and the equipment production efficiency is improved.

Description

technical field [0001] The invention relates to semiconductor equipment, in particular to a beam source furnace shutter for three-state molecular beam epitaxy. Background technique [0002] Molecular beam epitaxy (MBE) is to spray the components and doped atoms or molecules of the crystal from the beam source furnace to the substrate surface at a certain thermal movement speed and a certain composition ratio in an ultra-high vacuum environment. A method for preparing single crystal thin films by epitaxial growth. [0003] Among them, the beam source furnace and the beam source furnace shutter are important components of the molecular beam epitaxy equipment. The beam source furnace obtains a stable and controllable evaporation beam by heating the source material in the crucible. Each beam source furnace is equipped with an independent beam source furnace. Shutter, the shutter of the beam source furnace realizes the on-off control of the evaporation beam by releasing or block...

AI Technical Summary

Problems solved by technology

However, after the molecular beam epitaxy equipment has been running for a long time, the materials adsorbed on the inner wall of the cold shield continue to accumulate and gradually become thicker, eventually forming material fragments that are easy to fall off. Once these material fragments fall into the beam source furnace below, they will Cross-contamination of the source materials in the beam source furnace affects the quality of the epitaxial film, and also leads to uncontrollable evaporation beam flow, which affects the stability and repeatability of the subsequent process

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