Reverse recovery characteristic test circuit with adjustable reverse voltage
A technology of reverse recovery and reverse voltage, which is applied in the field of power electronics, can solve problems such as unachievable testing, and achieve the effect of improving performance
Active Publication Date: 2021-05-07
STATE GRID LIAONING ECONOMIC TECHN INST +1
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Problems solved by technology
However, for the reverse recovery characteristics of non-fully controlled semiconductor devices, such as diodes and thyristors, when the traditional LC oscillation circuit is used for testing, the final reverse voltage at both ends of the device depends on the magnitude of the turn-off current, and it is impossible to realize the reverse recovery characteristics under the same current. Different reverse voltage test
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[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in combination with the embodiments of the present invention and the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0024] like figure 1 As shown, the reverse recovery characteristic test circuit with adjustable reverse voltage includes: LC branch, tested non-fully controlled semiconductor device branch, semiconductor component branch, energy storage capacitor branch and energy absorbing branch. The LC branch, the measured non-full-control semiconductor device branch, and the semiconductor component branch are sequentially connected in series, and the semic...
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The invention relates to a reverse recovery characteristic test circuit with adjustable reverse voltage and belongs to the technical field of power electronics; the test circuit comprises an LC branch, a tested non-fully-controlled semiconductor device branch, a semiconductor assembly branch, an energy storage capacitor branch and an energy absorption branch. The LC branch circuit, the tested non-full-controlled semiconductor device branch and the semiconductor assembly branch are sequentially connected in series, and the semiconductor assembly branch, the energy storage capacitor branch and the energy absorption branch are connected in parallel. The circuit provided by the invention is used for improving a series of electromagnetic interferences such as voltage overshoot, oscillation and the like caused by transient breaking of a semiconductor device and remarkable energy loss, and the performance of equipment is improved.
Description
technical field [0001] The invention belongs to the technical field of power electronics, in particular to a reverse recovery characteristic test circuit with adjustable reverse voltage. Background technique [0002] Semiconductor devices are an important part of today's new energy power systems. Key electrical equipment such as converter valves, reactive power compensation devices, and DC circuit breakers are composed of a large number of semiconductor devices. The transient switching of semiconductor devices will bring a series of electromagnetic interference such as voltage overshoot and oscillation, as well as significant energy loss, which will affect the performance of the equipment. Therefore, it is very necessary to study the transient breaking characteristics of semiconductor devices, especially the reverse recovery characteristics of the device's turn-off process. However, for the reverse recovery characteristics of non-full-controlled semiconductor devices, such ...
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IPC IPC(8): G01R31/26
CPCG01R31/2601Y02B70/10
Inventor 穆昱壮王鹤霏李佳恒杨博朱赫炎
Owner STATE GRID LIAONING ECONOMIC TECHN INST