Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoresist containing photoacid generator with diester structure, and preparation method thereof

A photoacid generator and photoresist technology, applied in the field of photoresist, can solve the problems of inability to meet the resolution and line edge roughness of photoresist, reduce line width and roughness, and improve adhesion , the effect of improving the overall performance

Pending Publication Date: 2021-05-07
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the continuous development of manufacturing technology, the photoacid generator added to the photoresist can no longer meet the resolution and line edge roughness of the photoresist.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist containing photoacid generator with diester structure, and preparation method thereof
  • Photoresist containing photoacid generator with diester structure, and preparation method thereof
  • Photoresist containing photoacid generator with diester structure, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A preparation method of a photoresist containing a photoacid generator of a diester structure, the method comprising:

[0026] Take 0.25g of photoacid generator containing diester structure, 8.5g of film-forming resin, 0.06g of acid diffusion inhibitor and 80g of organic solvent A in a 100mL glass bottle and mix them uniformly and shake them in the dark for 24 hours. , the mixed solution is first filtered with a 0.22 micron filter, and then filtered with a 0.02 micron filter, and the collected filtrate is a photoresist solution containing a photoacid generator with a diester structure.

[0027] Specifically, the preparation method of the photoacid generator containing diester structure is:

[0028] S1. After dissolving 98g of maleic anhydride in 100g of toluene, add 220g of cyclohexanol and 50g of p-toluenesulfonic acid, stir evenly, heat up to 90°C for esterification reaction for 12h, add 100g of ethyl acetate and use 50mL Wash twice with deionized water, then dry org...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses photoresist of a photoacid generator with a diester structure, and a preparation method thereof. The photoresist comprises, by weight, 0.1-10 parts of the photo-induced acid generator containing the diester structure, 10-30 parts of film-forming resin, 0.1-5 parts of an acid diffusion inhibitor and 55-89.8 parts of an organic solvent A. According to the photoresist containing the photoacid generator with the diester structure provided by the embodiment of the invention, the photoacid generator with the diester structure is added, so that the photoacid generator in the photoresist can generate effective controllable large-volume acid when the photoresist is subjected to a photoetching process, the resolution ratio of the photoresist is further improved, the line width and roughness of the manufactured circuit are reduced, the adhesiveness of the resin is improved, and the overall performance of the photoresist is improved.

Description

technical field [0001] The invention relates to the technical field of photoresists, in particular to a photoresist containing a photoacid generator with a diester structure and a preparation method thereof. Background technique [0002] Photoresist, also known as photoresist, is an indispensable core material for the production of large-scale and ultra-large-scale integrated circuits in the microelectronics industry. It has attracted the attention of researchers because of its strategic position in national economy and national defense construction. . The photoacid generator is the most important component in the photoresist except the film-forming resin. The absorption spectrum of the photoacid generator determines the spectral sensitivity of the photoresist and the number of related active acids. The selection of the agent must consider many factors, such as the nature of the light source, the quantum efficiency of acid production, solubility, compatibility with the resi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004
CPCG03F7/004
Inventor 齐国强顾大公岳力挽李珊珊马潇毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com