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Mold for growing large-size gallium oxide crystals by edge-defined film-fed growth and growth method

A gallium oxide, large-scale technology, applied in the field of crystal growth equipment, can solve problems such as poor crystal quality, achieve the effects of improving quality, reducing growth difficulties, and solving growth defects

Pending Publication Date: 2021-05-14
杭州光学精密机械研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a mold and a growth method for growing large-sized gallium oxide crystals by the guided mode method. Problems with large temperature gradients leading to poor quality of grown crystals

Method used

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  • Mold for growing large-size gallium oxide crystals by edge-defined film-fed growth and growth method
  • Mold for growing large-size gallium oxide crystals by edge-defined film-fed growth and growth method
  • Mold for growing large-size gallium oxide crystals by edge-defined film-fed growth and growth method

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Experimental program
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Effect test

Embodiment 1

[0057] The furnace was charged with a structure basically the same as that of Comparative Example 1, the difference was that a mold with an arc-shaped top was used, and the lowest point of the center was about 1.5mm lower than the highest point. The shouldering process was relatively smooth throughout. After the shouldering reached 110mm, the center of the top of the mold remained in a stable crystalline state, and a complete gallium oxide single crystal with a width of 110mm was grown subsequently. The grown gallium oxide single crystal with a width of 110 mm was processed to obtain a 4-inch gallium oxide single crystal.

Embodiment 2

[0061] The furnace was loaded with a structure basically the same as that of Comparative Example 2, the difference was that the mold with an arc-shaped top was used, and the lowest point of the center was about 1.5mm lower than the highest point. In the seeding stage, the end of the seed crystal is in good contact with the top of the mold, and a thin layer of liquid film formed between the seed crystal and the top of the mold by the melt forms a perfect arc-shaped growth interface layer, and the temperature of the mold mouth is controlled to be constant and directly pulled , to obtain high-quality gallium oxide single crystals that are uniform, transparent, and free from visible defects. The grown gallium oxide single crystal with a width of 110 mm was processed to obtain a 4-inch gallium oxide single crystal.

[0062] To sum up, the present invention provides a mold and a growth method for growing large-sized gallium oxide crystals by the guided mode method. According to the...

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Abstract

The invention discloses a mold for growing large-size gallium oxide crystals by edge-defined film-fed growth and a growth method. In the width direction of the mold, the top end of the mold is a curved surface, and the curved surface is a concave curved surface and is an isothermal or approximately isothermal curved surface. According to the thermal field distribution condition of large-size gallium oxide crystals, the curved-surface mold top end structure is designed, and the curvature of the curved surface is obtained through fitting design of temperature gradient distribution. The curved surface top end structure can realize controllable adjustment of the radial temperature gradient of the mold, effectively solves the problem of growth defects caused by temperature difference during growth of large-size gallium oxide crystals, can effectively reduce growth difficulty caused by the temperature difference especially when the size is more than 4 inches, and remarkably improves the quality of the crystals. The mold can be suitable for various crystal guide modes by edge-defined film-fed growth, and various defects can be reduced, so that the utilization rate of the crystals is improved.

Description

technical field [0001] The invention relates to the field of crystal growth equipment, in particular to a mold and a growth method for growing large-sized gallium oxide crystals by a guided mode method. Background technique [0002] Existing guided mode growth devices such as figure 1 Shown, it is that a mold 2 that has slit 1 is put into the crucible 4 that gallium oxide melt 3 is housed ( figure 1 Middle 6 is an induction heating coil, through which the crucible 4 is heated, and the gallium oxide melt 3 in the crucible 4 rises to the top of the mold 2 along the slit 1 due to the capillary siphon effect. The seed crystal is then lowered so that it contacts the liquid surface at the top of the mold 2 . After the end of the seed crystal melts, it fuses with the melt at the top of the mold 2, and then slowly pulls upwards, and then undergoes processes such as necking and shouldering, and finally grows the desired crystal 5 with equal diameters. Among them, the shape of the ...

Claims

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Application Information

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IPC IPC(8): C30B15/34C30B29/16
CPCC30B15/34C30B29/16
Inventor 齐红基赛青林张龙
Owner 杭州光学精密机械研究所
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