A light-emitting element for chip-scale packaging, its preparation method and packaging structure

Abstract

The invention relates to the field of semiconductor optoelectronics, and provides a light-emitting element for chip-level packaging, a preparation method and a packaging structure thereof. The method includes: making an epitaxial layer, an N-type conductive region, a current spreading layer covering the P-type semiconductor layer, a passivation layer covering the current spreading layer and the epitaxial layer, a P electrode and an N electrode in sequence; and then using a magnetron sputtering process to make the covering The first seed layer on the end face of the P electrode and the end face of the N electrode; use the magnetron sputtering process to make the second seed layer covering the first seed layer, the passivation layer, the side of the P electrode and the side of the N electrode; use the electroplating process to cover the P electrode Thickened electrodes are formed on the second seed layer on the end face and on the second seed layer covering the end face of the N electrode; finally, the second seed layer covering the end face of the P electrode and the area outside the end face of the N electrode is etched. The method can thicken the electrodes and solve the problem that the white wall adhesive cannot be effectively filled to the area between the electrode pairs; the method is easy to implement, has high product yield and low cost, and should be popularized.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically, to a light-emitting element for chip-level packaging, a preparation method and a packaging structure thereof. Background technique [0002] The packaging of flip-chip LED chips generally includes flip-chip LED chips, white wall glue and brackets, and the chip electrodes and brackets are packaged by solder paste welding or eutectic welding. In the traditional packaging structure, the electrode of the chip is usually 2-3 μm. After CSP packaging, the white wall glue cannot effectively fill the space between the two electrodes of the chip. When the white wall glue cannot effectively fill the space between the two electrodes of the chip, It is easy to leak blue light between the two electrodes of the chip, and the brightness is damaged. At the same time, during the solder paste welding process, the solder paste belongs to metal and has the characteristic of...

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Problems solved by technology

[0004] The invention provides a light-emitting element for chip-level packaging and its preparation method and packaging structure to solve the problem that in the prior art, due to the thin thickness of the chip electrodes, after CSP packaging, the white wall glue cannot effectively fill the gap between the two electrodes of the chip. The problem of easy leakage of blue light caused by the area and due to the thin thickness of the chip electrode, the solder paste will spread to the side wall of the white wall during the solder paste welding process, resulting in poor leakage

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