Insulated gate bipolar transistor device and manufacturing method thereof

Abstract

The invention relates to an insulated gate bipolar transistor device and a manufacturing method thereof, and the method comprises the steps: obtaining a substrate, and forming a drift region, a gate region, a buffer region and a field oxide layer on the substrate; forming a first groove after removing the field oxide layer in a region between the gate region and the buffer region above the drift region, wherein one end of the first groove is adjacent to the gate region; and forming a silicon nitride layer with first internal stress on the substrate, wherein the silicon nitride layer is located above the first groove and extends upwards to the position above the gate region along the side wall of the first groove. According to the insulated gate bipolar transistor device, the internal stress is introduced into the insulated gate bipolar transistor device through the silicon nitride layer which is located above the first groove and extends upwards to the position above the gate region along the side wall of the first groove, so that the mobility of carriers in the device is improved, and the electrical property of the device is improved while the limitation of a silicon material is broken through.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing an insulated gate bipolar transistor device and an insulated gate bipolar transistor device. Background technique [0002] As the characteristic line width of integrated circuits shrinks below 90nm, improving device performance through gate thickness, gate dielectric constant and junction depth can no longer meet the requirements of the process. Even if the gate thickness is controlled at 5 atomic layers, the junction depth is only 10nm. Therefore, in order to further improve the performance of the device, it is necessary to introduce new technology with an appropriate increase in cost. [0003] The research on the traditional Silicon On Insulator-Lateral Insulated Gate Bipolar Transistor (Silicon On Insulator-Lateral Insulated Gate Bipolar Transistor, SOI-LIGBT) is mainly to improve the device structure, such as multi-channel structure, U-shape...

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Problems solved by technology

[0003] The research on the traditional Silicon On Insulator-Lateral Insulated Gate Bipolar Transistor (Silicon On Insulator-Lateral Insulated Gate Bipolar Transistor, SOI-LIGBT) is mainly to improve the device structure, such as multi-channel structure, U-shaped channel structure, carrier Fluor storage structure, trench gate structure, etc. speed up the turn-off speed of the device, improve the anti-latch-up ability and short-circuit robustness of the device, etc., but due to the limit limit of silicon materials, the performance of the device has not been improved.

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