Manufacturing method of piezoresistive gauge pressure sensor
A technology of a pressure sensor and a manufacturing method, which is applied in the direction of fluid pressure measurement by changing the ohmic resistance, can solve problems such as zero drift, and achieve the effects of reducing process deviation, good uniformity, and suitable for mass production
Active Publication Date: 2021-05-25
长芯科技(上海)有限公司
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Problems solved by technology
[0005] How to well solve the problem of zero drift caused by process deviation and manufacture high-quality piezoresistive pressure sensors is the subject that the applicant is committed to solving and wants to overcome
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[0045] The preferred solutions of the present invention will be further described below in conjunction with the accompanying drawings, so that the technical solutions of the present application can be well understood.
[0046] A method for manufacturing a piezoresistive gauge pressure sensor, comprising step 1: forming an corrosion stop layer for forming a cavity on the front side of an SOI substrate provided with an intermediate buried oxide layer by deep reactive ion etching The first deep groove of the ring structure; the middle buried oxide layer plays the role of corrosion stop layer when making the cavity. The deep groove one adopts a closed ring structure design, and the deep groove one defines the lateral dimension of the cavity of the pressure sensor. Then use dry etching to remove the top silicon layer and the middle buried oxide layer in deep groove one, and then use deep reactive ion etching to etch the silicon base of the SOI substrate in deep groove one; the etch...
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The invention discloses a manufacturing method of a piezoresistive gauge pressure sensor. The manufacturing method comprises the steps of forming a deep groove I of an annular structure of a corrosion stop layer used for manufacturing a cavity on the front surface of an SOI substrate by usinga deep reactive ion etching method, wherein a middle buried oxide layer is arranged in the SOI substrate, and the buried oxide layer is used as a corrosion stop layer when the cavity is manufactured; filling silicon oxide in the deep groove I, then removing the silicon oxide layer on the surface, and growing an epitaxial silicon layer by taking the top layer of the SOI substrate as a seed layer; manufacturing four piezoresistors of the pressure sensor on the epitaxial silicon layer and forming a Wheatstone bridge structure; after the front surface is completed, forming a deep groove II for manufacturing a cavity by using a double-sided photoetching method and a deep reactive ion etching method; filling silicon oxide in the deep groove II, and selectively removing the silicon oxide at the bottom of the deep groove II by using a dry etching method; and forming a final cavity by using a wet etching solution of silicon. According to the technical scheme, the problem of zero drift caused by process deviation is solved, and the quality of the manufactured sensor is higher than that of a sensor manufactured through a traditional process.
Description
technical field [0001] The invention relates to a method for preparing a pressure sensor, in particular to a method for manufacturing a piezoresistive gauge pressure sensor. Background technique [0002] The current mainstream electrical response pressure sensors respond to the pressure in real time by converting the deformation of the device under pressure into changes in the electrical performance parameters of the sensor. Among them, the piezoresistive pressure sensor has been widely used because of its simple preparation process, high response stability, strong anti-interference ability, high sensitivity, good linearity, and simple follow-up processing circuit, and has become a research hotspot in the field of flexible pressure sensors. [0003] A piezoresistive pressure sensor consists of three main components: a piezoresistor, a stressed film, and a silicon island. Among them, four piezoresistors constitute a Wheatstone bridge, which converts the pressure acting on th...
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IPC IPC(8): G01L9/06
CPCG01L9/06
Inventor 陈志宝
Owner 长芯科技(上海)有限公司