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Electrostatic chuck and semiconductor processing equipment

An electrostatic chuck and processed technology, which is applied in semiconductor/solid-state device manufacturing, circuits, discharge tubes, etc., can solve the problem of large capacitance to ground and achieve high processing efficiency

Pending Publication Date: 2021-05-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the existing electrostatic chuck structure, it consists of a DC electrode, a heater, and an aluminum substrate arranged in sequence. Since the aluminum substrate is grounded through the chamber, the distance between the DC electrode and the aluminum substrate is relatively close, so the existing electrostatic chuck The capacitance to ground is larger

Method used

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  • Electrostatic chuck and semiconductor processing equipment
  • Electrostatic chuck and semiconductor processing equipment
  • Electrostatic chuck and semiconductor processing equipment

Examples

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Embodiment 1

[0034] Please refer to figure 1 , this embodiment provides an electrostatic chuck for fixing a workpiece to be processed, which includes an insulating layer 1 and a temperature regulating structure 2 . Wherein, the insulating layer 1 is provided with a DC electrode 11, which can absorb the processed workpiece placed on the insulating layer 1 by using the principle of electrostatic adsorption, so as to realize the fixation of the processed workpiece. When the above-mentioned electrostatic chuck is applied in the plasma immersion ion implantation process, the DC electrode 11 will also be fed with a DC pulse to provide energy for attracting ions to the workpiece to be processed. In some embodiments, the insulating layer 1 can be made of insulating materials such as ceramics.

[0035] The temperature adjustment structure 2 includes an insulating base 21 arranged at the bottom of the insulating layer 1 to insulate from the ground; in some application scenarios, there is a ground w...

Embodiment 2

[0054] This embodiment provides a semiconductor processing device, which includes a reaction chamber and an electrostatic chuck disposed in the reaction chamber. The electrostatic chuck adopts the electrostatic chuck described in Embodiment 1, which is used to fix the workpiece to be processed.

[0055] The semiconductor processing equipment provided in this embodiment, by using the electrostatic chuck provided in the above embodiment to fix the workpiece to be processed, can obtain the smallest possible ground capacitance, thereby reducing the power loss on the ground capacitance and making more More power is used in the processing process to obtain higher processing efficiency.

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Abstract

The invention provides an electrostatic chuck and semiconductor processing equipment. The electrostatic chuck comprises an insulating layer and a temperature adjusting structure, wherein a direct-current electrode is arranged in the insulating layer and is used for electrostatic adsorption of a processed workpiece arranged on the insulating layer, the temperature adjusting structure comprises an insulating base body arranged at the bottom of the insulating layer, a heat exchange component suspended to the ground is arranged in the insulating base body, the heat exchange component comprises a contact surface exposed from the upper surface of the insulating base body, and the contact surface makes contact with the lower surface of the insulating layer and is used for controlling the temperature of the machined workpiece through heat conduction. According to the electrostatic chuck and the semiconductor processing equipment provided by the invention, the ground capacitance of the direct-current electrode can be reduced, so that the power loss on the ground capacitance is reduced, and the process efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and semiconductor processing equipment. Background technique [0002] At present, plasma immersion ion implantation technology is widely used in the manufacturing process of integrated circuits or micro-electro-mechanical system devices. Specifically, the plasma immersion ion implantation technology is a surface modification that injects accelerated ions in the plasma as dopants into a suitable substrate or a target of a semiconductor chip with electrodes by applying a high-voltage pulsed DC or pure DC power supply. sexual technology. Since the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals, these active particles reach the surface of the wafer under the action of a lower bias voltage, and interact with the wafer to cause various physical phenomena on the surface of the mate...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/67H01J37/32
CPCH01L21/6833H01L21/67248H01J37/32412H01J37/32724
Inventor 王桂滨韦刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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