LED device with embedded electrode structure and preparation method thereof

Abstract

The invention relates to the technical field of semiconductors, in particular to an LED device with an embedded electrode structure and a preparation method of the LED device. The LED device with the embedded electrode structure comprises a second silicon substrate, a bonding layer, a first passivation layer, a metal layer, a reflecting mirror layer, a p-GaN layer, an AlGaN electron blocking layer, an InGaN / GaN multi-quantum well layer, an n-GaN layer and a second passivation layer which are sequentially arranged from bottom to top, wherein the p electrode and the n electrode of the LED device are evenly distributed in a hole-shaped structure in the device in an embedded electrode mode, and the pad leading-out electrodes of the p electrode and the n electrode are located on the back face of the light-emitting face of the device. The invention further provides a preparation method of the LED device with the embedded electrode structure. According to the LED device with the embedded electrode structure, the light extraction efficiency of the device is effectively improved, current expansion is facilitated, and the LED device has excellent heat dissipation capacity.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an embedded electrode structure LED device and a preparation method thereof. Background technique [0002] The core of solid-state lighting technology is high-brightness GaN-based light-emitting diodes. Compared with traditional incandescent lamps and fluorescent lamps, light-emitting diodes (LEDs) have more prominent electro-optical conversion efficiency, and have many advantages such as environmental protection, long life and small size. [0003] The current mainstream GaN-based LED chip structures include positive-mounted horizontal structure LEDs, flip-chip structure LEDs, and vertical structure LEDs. The front-mounted horizontal structure has mature technology and low manufacturing cost. Both the P electrode and the N-electrode are arranged on the same side of the chip, but there are problems of poor heat dissipation and low light extraction rate; the flip-chip struct...

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Problems solved by technology

The front-mounted horizontal structure has mature technology and low manufacturing cost. Both the P electrode and the N-electrode are arranged on the same side of the chip, but there are problems of poor heat dissipation and low light extraction rate; the flip-chip structure is to place the front-mounted horizontal structure upside down on the substrate. The chip structure effectively improves the heat dissipation capability and light extraction efficiency, but it still has the problems of too long current transmission path and current congestion at the steps; the P electrode and N electrode of the vertical structure LED are arranged on both sides of the GaN film, which effectively solves the current congestion However, the vertical structure also has the problem that the electrode blocks light, which limits the light extraction efficiency of the LED and the uneven current distribution reduces the life of the LED device.

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