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A kind of transparent conductive film and preparation method thereof

A technology of transparent conductive film and conductive layer, which is applied to equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., which can solve uneven stress distribution and cracking of conductive oxide layers , warping and other issues, to achieve good performance, improve stability, not easy to crack or warp

Active Publication Date: 2022-08-05
大正(江苏)微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a transparent conductive film and its preparation method, to further reduce the square resistance of the transparent conductive film, and to solve the cracking or warping of the conductive oxide layer caused by the uneven stress distribution of the transparent conductive film during annealing question

Method used

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  • A kind of transparent conductive film and preparation method thereof
  • A kind of transparent conductive film and preparation method thereof
  • A kind of transparent conductive film and preparation method thereof

Examples

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preparation example Construction

[0044] The present invention also provides a method for preparing a transparent conductive film, comprising:

[0045] Prepare the first conductive layer on the surface of the transparent substrate:

[0046] A layer of conductive oxide is deposited on the surface of the transparent substrate, and then annealed to obtain a first conductive layer, wherein the annealing temperature is 120-170°C, and the annealing time is 20-40min;

[0047] Prepare a second conductive layer on the surface of the first conductive layer:

[0048] coating, depositing or printing a conductive material on the surface of the first conductive layer to form a second conductive layer containing a pattern;

[0049] Prepare a third conductive layer on the surface of the second conductive layer:

[0050] A layer of conductive oxide is deposited on the surface of the second conductive layer to form a third conductive layer.

[0051] In the present invention, the first conductive layer containing the conducti...

Embodiment 1

[0084]

[0085] The first conductive layer of ITO was prepared on the surface of a PEN transparent substrate with a thickness of 125 μm by vacuum magnetron sputtering, and then annealed at a temperature of 120° C. and an annealing time of 40 min. The thickness of the first conductive layer was 100 nm.

[0086]

[0087] After the nano-silver wires and anhydrous ethanol are mixed and dispersed uniformly, a nano-metal wire paste with a concentration of 8 mg / ml is obtained. The nanowires are 20 μm in length and 30 nm in diameter.

[0088]The nano metal wire slurry was coated on the surface of the first conductive layer through a slit coating die, and the second conductive layer was formed after curing; wherein the curing temperature was 100° C. and the curing time was 15 minutes. The thickness of the second conductive layer is 80 nm, that is, the thickness of the nano-silver wire layer, the line width of the nano-silver wire is 20 μm, and the line spacing is 500 μm.

[0089]...

Embodiment 2

[0092] Except in , the annealing temperature of the first conductive layer is 140°C, the annealing time is 35min, and the thickness of the first conductive layer is 50 nm; in , the nano metal The concentration of the wire paste is 8mg / ml, the curing temperature is 110°C, the curing time is 12min, and the thickness of the second conductive layer is 120nm; Except that the layer thickness was 40 nm, the rest was the same as that of Example 1.

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Abstract

The invention provides a transparent conductive film and a preparation method thereof, wherein the transparent conductive film comprises a transparent substrate, a first conductive layer, a second conductive layer and a third conductive layer from bottom to top, the first conductive layer and the third conductive layer Each conductive layer independently contains a conductive oxide, the second conductive layer contains a metal or carbon material, the thickness of the first conductive layer is 25-100 nm, the thickness of the second conductive layer is 50-150 nm, and the thickness of the third conductive layer 5-50nm. The transparent conductive film prepared by the preparation method of the invention has low square resistance and high light transmittance, is less prone to cracking or warping, and has better performance.

Description

technical field [0001] The invention relates to the technical field of conductive films, in particular to a transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive film is a film that can conduct electricity and has high light transmittance in the visible light range, and is widely used in optical devices, display devices, touch screens, thin-film photovoltaic modules and other fields. [0003] The transparent conductive film is mainly a transparent conductive oxide (TCO) conductive film. The base material is usually polyethylene terephthalate (PET), and the conductive layer is usually indium tin oxide (ITO). This conductive film has good flexibility, but its resistance performance and light transmittance performance still need to be improved. [0004] In the prior art, a layer of transparent oxide film is obtained by vacuum magnetron sputtering method on the surface of metal grid, and a transparent conductive film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/0026H01B13/0016
Inventor 虞旺刘克永
Owner 大正(江苏)微纳科技有限公司
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