Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device comprises the steps of: providing a substrate; forming an insulating layer on the substrate; forming an opening exposing the substrate by etching the insulating layer; forming a contact plug on the opening and the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser beam.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device. Background technique [0002] Semiconductor devices can be classified into volatile memory devices and nonvolatile memory devices. Typically, volatile memory devices include dynamic random access memory (DRAM) devices or static random access memory (SRAM) devices. A representative non-volatile storage device is a flash memory device. [0003] On the other hand, with the high development of the electronic industry, semiconductor devices are also highly integrated. In the manufacturing process of semiconductor devices, contact plugs are formed for stable electrical connection between upper and lower patterns. [0004] However, in the case of forming a contact plug according to a conventional method, a void (Void) is formed in the contact plug, and this void is exposed to the outside in a subsequent process to cause surface defects such as a seam (Seam). There occurs a p...

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Problems solved by technology

[0004] However, in the case of forming a contact plug according to a conventional method, a void (Void) is formed in the contact plug, and this void is exposed to the outside in a subsequent process to cause a surface defect such as a seam (Seam). The problem of deteriorating device characteristics such as an increase in wiring resistance occurs

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