Liquid phase growth device and liquid phase growth method of silicon carbide single crystal

Abstract

The invention discloses a liquid phase growth device and a liquid phase growth method of silicon carbide single crystal, the device comprises: a first growth assembly, a second crucible and a graphite pipe assembly, the first growth assembly is used for accommodating a first crucible used for providing a liquid phase growth place for the silicon carbide single crystal; the second crucible is contained in the second growth assembly, and a space for containing raw material carbon is formed in the second crucible; the first crucible and the second crucible are connected through the graphite pipe assembly to form a passage, a silicon solution and carbon flow and diffuse in the first crucible and the second crucible through the passage, and a supersaturated solution of the carbon in the silicon solution is formed in the first crucible; and liquid phase growth is performed to obtain the silicon carbide single crystal. According to the invention, the problems that the solubility of carbon in the silicon dissolving solution is too low and the crystal cannot grow up can be effectively solved, and the dislocation defect of the silicon carbide single crystal is effectively improved.

Description

technical field [0001] The invention relates to a silicon carbide single crystal manufacturing device, in particular to a silicon carbide single crystal liquid phase growth device and a liquid phase growth method. Background technique [0002] Silicon carbide (SiC) single crystal is one of the most important third-generation semiconductor materials. It is widely used because of its excellent properties such as large band gap, high saturation electron mobility, strong breakdown field, and high thermal conductivity Power electronics, radio frequency devices, optoelectronic devices and other fields. The 4H-SiC single crystal substrates currently on the market suffer from a variety of dislocation defects, and in general, the defect density ranges from thousands to 10,000 per square centimeter. These defects reduce the yield of devices and affect the large-scale application of SiC power devices. [0003] However, these dislocations are difficult to be well controlled in the SiC...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, one of the objectives of the present invention is to provide a liquid phase growth device for silicon carbide single crystals, which realizes the solution of SiC obtained at high temperature under normal pressure, while solving the problem of carbon For the problem of low solubility in Si solution, using the device of the present invention to carry out liquid phase growth effectively improves the dislocation defects in the growth process of silicon carbide single crystal

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