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Ferroelectric memory

A memory, ferroelectric technology, applied in the direction of electric solid devices, circuits, capacitors, etc., can solve problems such as non-conformity, and achieve the effect of increasing the number of operations, stabilizing ferroelectric properties, and slowing down operational deterioration.

Pending Publication Date: 2021-06-08
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional ferroelectric memory technology based on hafnium oxide (HfO) material, its operation degradation is mostly within 10 6 It will be generated after the cycle, which does not meet the needs of the industry

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0047] The volume percentage of different crystal phases in the ferroelectric layer under certain conditions

[0048] In this embodiment, under specific conditions, different crystalline phases (including monoclinic phase, M-phase), orthorhombic phase (orthorhombic phase, O-phase), and tetragonal phase (tetragonal phase, T-phase)) accounted for the volume percentage to verify, wherein the monoclinic phase (M-phase) corresponds to Dielectric properties are generated, the orthorhombic phase (O-phase) corresponds to ferroelectric properties, and the tetragonal phase (T-phase) corresponds to antiferroelectric properties. The device structure of ferroelectric memory I, ferroelectric memory II, and ferroelectric memory III is as follows figure 1 shown. The ferroelectric layer of ferroelectric memory I is made of hafnium zirconium oxide (HfZrO x ), the first and second electrode layers are made of titanium nitride (TiN), and the main crystallographic directions of the first and seco...

Embodiment 2

[0053] The relationship between the number of operations and remanent polarization (Pr) of ferroelectric memory

[0054] In this embodiment, according to the structural configuration of the element device shown in Embodiment 1, under the conditions of applying an electric field intensity of 2.5MV / cm and applying a stress of 1GPa, the ferroelectric memory I and the ferroelectric memory III are subjected to the residual electrode The test of remanent polarization (Pr) changes with the number of operations (cycle), the results are as follows Figure 4 shown.

[0055] Depend on Figure 4 It can be seen that under the above test conditions, when the number of operations is gradually increased, the remanent polarization (Pr) of the ferroelectric memory I (the main crystallographic direction of the titanium nitride (TiN) electrode layer is (100)) increases with the operation It has been seen that there is an obvious wake-up behavior when the number of operations increases, and when...

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Abstract

The invention provides a ferroelectric memory. The memory comprises: a first electrode layer, wherein the main crystallization direction of the first electrode layer comprises(110) or (220); a second electrode layer arranged opposite to the first electrode layer, wherein the main crystallization direction of the second electrode layer comprises (110) or (220); and a ferroelectric layer arranged between the first electrode layer and the second electrode layer, wherein the main crystallization direction of the ferroelectric layer is (111).

Description

technical field [0001] The present invention relates to a ferroelectric memory, in particular to a ferroelectric memory configured with an electrode layer with a specific crystal direction. Background technique [0002] Ferroelectric memories (Ferroelectric memories) are destructive read memories that have high requirements for the number of operations, so any method for increasing the number of operations is valuable. Traditional ferroelectric memory technology based on hafnium oxide (HfO) material, its operation degradation is mostly within 10 6 It will be generated after the cycle, which does not meet the needs of the industry. Contents of the invention [0003] In order to increase the operation times of the ferroelectric memory, the present invention provides a ferroelectric memory, which uses the design of the environmental stress in the element structure and the configuration of the electrode layer with a specific crystallographic direction to produce a nearly wake...

Claims

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Application Information

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IPC IPC(8): H01L27/11507
CPCH10B53/30G11C11/221H01L28/75G11C11/22
Inventor 林雨德李亨元叶伯淳杨昕芸
Owner IND TECH RES INST
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