Preparation method of polycrystalline silicon resistor
A technology of polysilicon resistance and polysilicon layer, applied in the direction of resistors, circuits, electrical components, etc., to achieve the effect of reducing process costs and improving production efficiency
Pending Publication Date: 2021-06-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0004] The purpose of the present invention is to provide a method for preparing polysilicon resistors to solve the problem of how to form multiple polysilicon resistors with different resistivities in one process
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[0025] A method for preparing a polysilicon resistor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales.
[0026] In order to solve the above technical problems, this embodiment provides a method for preparing a polysilicon resistor, such as figure 1 shown, including:
[0027] Step 1 S10: providing a substrate on which a polysilicon layer is formed.
[0028] Step 2 S20: rem...
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The invention provides a preparation method of a polycrystalline silicon resistor. The preparation method comprises the following steps of: providing a substrate, wherein a polycrystalline silicon layer is formed on the substrate; and removing part of the polycrystalline silicon layer to divide the polycrystalline silicon layer into a plurality of sub polycrystalline silicon layers; simultaneously executing at least one ion implantation process on all the sub polycrystalline silicon layers; and respectively executing at least one ion implantation process on each sub polycrystalline silicon layer, wherein the types and / or concentrations of ions adopted by the sub polycrystalline silicon layers are different. Therefore, on the basis that at least one ion implantation process is executed at the same time, the ion implantation processes with different concentrations and / or different types are executed on each sub polycrystalline silicon layer, so that the preset resistivity is obtained through the ion superposition effect, and a plurality of sub polycrystalline silicon resistors with different preset resistivity are further obtained. The preparation method can prepare a plurality of polycrystalline silicon resistors with different resistivity at the same time, improve the preparation efficiency, and can obtain the preset resistivity accurately by adjusting the concentration and / or the type of the ions.
Description
technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for preparing polysilicon resistors. Background technique [0002] In the circuit design of semiconductor chips, polysilicon resistors are widely used. Polysilicon resistors are generally prepared by ion doping polysilicon. Commonly used N+ doped polysilicon resistors and P+ doped polysilicon resistors are formed by implanting N-type ions and P-type ions and diffusing after annealing. Currently commonly used resistivity is about 300ohm / sq-1000ohm / sq. When preparing a polysilicon resistor with a higher resistivity, it is generally necessary to use an additional photomask in the prior art and then perform an ion implantation process to obtain a preset higher resistivity. However, this method not only needs to increase the preparation cost, but also it is difficult to obtain a relatively accurate preset resistivity, and only polysilicon resist...
Claims
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IPC IPC(8): H01L49/02H01L23/64H01L21/265H10N97/00
CPCH01L28/22H01L21/26506H01L23/647
Inventor 刘宪周
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP