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Trench gate super-junction IGBT containing high-resistance p-top region

A trench gate and base technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult storage of holes, increased conduction voltage drop, poor conductance modulation effect, etc.

Active Publication Date: 2021-06-11
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in ordinary super-junction IGBTs, the conductance modulation effect (or carrier storage effect) of the n-column and p-column in the on-state is poor, mainly because the p-column is easy to collect holes and quickly convert the collected Holes are extracted to the emitter, making it difficult for holes to be effectively stored in the n-column and p-column, increasing the conduction voltage drop

Method used

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  • Trench gate super-junction IGBT containing high-resistance p-top region
  • Trench gate super-junction IGBT containing high-resistance p-top region
  • Trench gate super-junction IGBT containing high-resistance p-top region

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Embodiment Construction

[0028] The invention will be described in detail below with reference to the accompanying drawings.

[0029] figure 1 (a) is a schematic diagram of the structure of ordinary super knot IGBT, figure 1(b) is a schematic diagram of the structure of ordinary semi-junction IGBT. Compared with super junction IGBT, half of the N-Pill Rone 31) and the P-pillar (P-PILLAR Zone 32) and the N-type buffer (N-Buffer zone 20) for more U-type auxiliary layer (N-Assist layer 30) withdrawn from partially plus voltage, wherein the doping concentration of the n-type auxiliary layer (N-Assist layer 30) may be lower than or equal to the doping of the N-region (N-PILLAR region 31). concentration. When a voltage exceeding the threshold voltage is applied to the gate (G), the base region (PB zone 41) forms an electronic channel near the insulating layer (49) interface; if the collector (C) is applied to a positive of more than 0.7 V Voltage, electrons pass through the emitter (e) under the action of the ...

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Abstract

The invention provides a super-junction IGBT device, which is characterized in that a top region of a second conduction type with higher resistivity is arranged on a semiconductor region of the second conduction type in a voltage withstanding layer. In a forward conduction state, a voltage drop is generated on the top region, the potential of the semiconductor region of the second conduction type in the voltage withstanding layer is increased, the carrier storage effect in the body is helped to be enhanced, and the conduction voltage drop is reduced.

Description

Technical field [0001] The present invention belongs to a semiconductor device, in particular a power semiconductor device. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a medium high voltage power semiconductor switching device. Since the conductive time is required to store a large number of non-balanced carriers to achieve the conductance modulation of the withstand voltage layer (high-resistance zone), the turn-off speed of the IGBT is more slow than the single-pole power semiconductor device. Therefore, IGBT has a contradictory relationship between conduction pressure drop and shutdown power consumption. Superjunction, SJ) is an N-column / p-column alternately arranged withstand voltage, which allows N-column and p columns to achieve higher breakdown voltages at higher doping concentrations, usually used in single Extreme power semiconductor device. In fact, super junctions can also be applied to IGBT to help IGBT improve the contradictory relatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/0634H01L29/7397
Inventor 马瑶黄铭敏李芸
Owner SICHUAN UNIV
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