A terahertz wave modulator based on atom-like vacancy defects

A technology of vacancy defects and modulators, applied in the field of terahertz wave modulators, can solve problems such as complex manufacturing process and complex structure, and achieve the effect of good stability and simple structure

Active Publication Date: 2022-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there have been many studies on the use of metamaterials to regulate terahertz waves, mainly by dynamically adjusting the size parameters of the artificial microstructure itself, or adjusting the medium environment in which it is located, or by adjusting the relationship between two terahertz resonators. Coupling to achieve active regulation of terahertz waves, most of them have complex structures, complex and difficult manufacturing processes, and most of them are for the regulation of single resonance
However, for terahertz metamaterial arrays with fixed structure and medium environment, there is no report on how to adjust the response of superstructure arrays to terahertz waves by using the defects existing in artificial microstructure arrays, so as to realize the modulation of terahertz

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A terahertz wave modulator based on atom-like vacancy defects
  • A terahertz wave modulator based on atom-like vacancy defects
  • A terahertz wave modulator based on atom-like vacancy defects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0026] figure 1 A structural diagram of a unit array of a terahertz wave modulator based on an atomic vacancy-like defect provided for an embodiment; figure 2 A top-view structural diagram of a unit array of a terahertz wave modulator based on atomic vacancy-like defects provided for the embodiment. Depend on figure 1 and figure 2 It can be seen that the terahertz wave modulator of the embodiment includes a sapphire substrate with a thickness of 500 μm, and a metamaterial structure layer formed on the substrate; the metamaterial structure layer includes a plurality of metamaterial units arranged in an array, and the metamaterial structure layer The material unit is composed of 4 C-type resonant rings arranged in a 2×2 arrangement. The openings of the two C-type resonant rings in the first row are arranged opposite to each other, and the openings of the two C-type resonant rings in the second row are arranged in opposite directions; The C-type resonant ring in the second r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A terahertz wave modulator based on atom-like vacancy defects belongs to the technical field of terahertz wave modulators. It includes a substrate, and a metamaterial structure layer formed on the substrate; the metamaterial structure layer includes a plurality of metamaterial units arranged in an array, and the metamaterial units are composed of 4 C-shaped resonant rings arranged in a 2×2 arrangement wherein, any one C-type resonant ring is made of semiconductor material or vanadium dioxide, and the other three C-type resonant rings are made of metal material. One C-type resonant ring in the unit structure of the present invention is a semiconductor material or vanadium dioxide, and the other three C-type resonant rings are metal materials, wherein the introduction of the semiconductor material or vanadium dioxide will serve as a "vacancy defect" in the structural unit ”, which can show the effect of double resonance; at the same time, further, through the external excitation method of heating or optical pumping, the active regulation of terahertz waves can be realized, with simple structure and good stability.

Description

technical field [0001] The invention belongs to the technical field of terahertz wave modulators, in particular to a terahertz wave modulator based on atom-like vacancy defects. Background technique [0002] Terahertz waves are electromagnetic waves between photonics and electronics. They usually refer to electromagnetic waves in the range of 0.1THz to 10THz, and are widely used in communications, imaging, radar and other fields. At the same time, terahertz wave technology was rated as one of the "Top Ten Technologies that Change the Future World" by the United States, and was listed as the top of the "Top Ten Key Strategic Objectives of National Pillars" by Japan. There is no doubt that the terahertz control device has become one of the key core devices. [0003] Metamaterials are artificially fabricated composite microstructured materials with electromagnetic properties that are not found in natural materials. At present, many studies have used metamaterials to control t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/015G02F1/01
CPCG02F1/015G02F1/0102
Inventor 文天龙黄洁田晨辰张怀武廖宇龙钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products