Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A semiconductor and detection circuit technology, applied in the direction of semiconductor devices, transistors, electrical components, etc., can solve the problems of increasing the number of components, circuit scale, voltage rise, abnormality, etc.

Pending Publication Date: 2021-06-18
MITSUBISHI ELECTRIC CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there are concerns about an increase in the number of parts and an increase in the circuit scale
[0006] On the other hand, it is known that when an overcurrent occurs in a switching element, an unsaturated state occurs, and a voltage abnormality occurs in which the voltage between the positive electrode and the negative electrode rises even though it is in the on state.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0024] figure 1 as well as figure 2 It is a circuit diagram illustrating the configuration of the semiconductor device according to the first embodiment.

[0025] refer to figure 1 , the semiconductor device 100A functions as a driver IC for the switching element 10a. The switching element 10a that is turned on and off by the semiconductor device 100A is typically composed of an IGBT, and is connected between the intermediate potential node 23 and the low potential node 22 supplied with the low potential GND. That is, the switching element 10a corresponds to a switching element on the low potential side.

[0026] refer to figure 2 , the semiconductor device 100A functions as a driver IC for the switching element 10b. The switching element 10b that is turned on and off by the semiconductor device 100A is typically composed of an IGBT, and is connected to the high potential node 21 and the high potential node 21 supplied with the high potential Vcc. figure 1 between the ...

Embodiment approach 2

[0063] In Embodiment 2, a circuit configuration for easily adjusting a determination voltage for detecting an unsaturated state will be described.

[0064] Figure 6 It is a first circuit diagram illustrating the configuration of the semiconductor device according to the second embodiment.

[0065] refer to Figure 6 The semiconductor device 100B according to Embodiment 2 is different from the semiconductor device 100A according to Embodiment 1 in the configuration of the detection circuit 110 . Specifically, in Embodiment 2, with figure 1 Compared with the structure of the above, the detection circuit 110 further has a resistance element 122 connected in series with the current source 120 between the intermediate potential node 23 and the node N1. It is also preferable that the resistance value R2 of the resistance element 122 can be variably adjusted by trimming or the like. The structure of other parts of the semiconductor device 100B is the same as that of the semicond...

Embodiment approach 3

[0077] In Embodiment 3, a preferred configuration example of the current source 120 of the detection circuit 110 will be described.

[0078] Figure 8 It is a circuit diagram illustrating the configuration of the semiconductor device according to the third embodiment.

[0079] refer to Figure 8 The semiconductor device 100C according to the third embodiment shows a configuration example of the current source 120 included in the detection circuit 110 of the semiconductor device 100B according to the second embodiment.

[0080] Specifically, in Embodiment 3, the current source 120 of the detection circuit 110 includes current mirror circuits 125 and 126 . Figure 8 Other structures and implementations of 2 ( Figure 6 ) are the same, so the detailed description thereof will not be repeated. That is, since the detection signal Sab of the semiconductor device 100C is generated in the same manner as the semiconductor device 100B according to the second embodiment, it is possib...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a semiconductor device. A detection circuit (110) includes a current source (120) and a resistor element (121) which are connected in series via a first node (N1) between a positive electrode and a negative electrode of a switching element (10a) which is turned on and off by a driving circuit. A voltage comparator (130) outputs a detection signal indicating a comparison result between an input DC voltage and the voltage of the first node (N1). The DC voltage (Vt) and the electric resistance value (R1) of the resistor element (121) are set in such manner that when an inter-electrode voltage between the positive electrode and the negative electrode becomes higher than a predefined determination voltage, the voltage of the first node is higher than the DC voltage. The detection circuit (110) and the voltage comparator (130) are mounted on the same integrated circuit constituting the semiconductor device (100A).

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] In an inverter or the like, a so-called bridge arm structure is used in which two semiconductor switching elements (hereinafter simply referred to as "switching elements") are connected between a high potential node and a low potential node via an intermediate potential node. Hereinafter, in the bridge arm structure, the switching element connected to the high potential side is also referred to as a high potential side switching element, and the switching element connected to the low potential side is also referred to as a low potential side switching element. [0003] Japanese Patent Application Laid-Open No. 2019-4535 describes a semiconductor device including a detection circuit for state information of a switching element on the high potential side in the bridge arm structure. In Japanese Patent Application Laid-Open No. 2019-4535, a detection circuit and a signa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
CPCH03K17/567H03K17/18H03K17/0822H03K17/687H03K17/08122
Inventor 羽生洋山本晃央
Owner MITSUBISHI ELECTRIC CORP