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Thin film metal oxide structure and manufacturing method thereof

A thin-film metal and oxide technology, applied in metal material coating process, liquid chemical plating, coating, etc., can solve problems affecting device performance, stability and efficiency, and difficulty in obtaining high-quality metal oxide films. Achieve the effect of good weight and stable use

Pending Publication Date: 2021-06-25
陕西雷翔新材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] So if thin films of high quality single crystal metal oxide materials are available on bulk wafers such as silicon wafers, then integrated semiconductor structures can be obtained which utilize the best properties of both silicon and metal oxide materials; but existing Technology is still difficult to obtain high-quality metal oxide thin films, which also affects the performance, stability and efficiency of devices;

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  • Thin film metal oxide structure and manufacturing method thereof

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] A thin film metal oxide structure, comprising a substrate 1 and a metal oxide thin film 2 disposed on the substrate 1;

[0022] The substrate 1 adopts a single crystal silicon substrate;

[0023] The metal oxide thin film 2 is made of metal oxide sol;

[0024] Wherein, the oxide in the metal oxide film 2 is aluminum oxide;

[0025] Wherein, the oxide in the metal oxide film 2 can also be copper oxide or iron oxide, which can be set according to actual...

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Abstract

The invention relates to a thin film metal oxide structure. The thin film metal oxide structure comprises a substrate and a metal oxide thin film arranged on the substrate. According to the thin film metal oxide structure, the substrate is firstly cleaned, the substrate is kept in a clean state, the subsequent metal oxide thin film can be tightly attached to the substrate, then the substrate is coated with metal oxide sol in a rotating mode, then the metal oxide thin film is obtained through gradient heating, so that the weight of the obtained metal oxide thin film is good; and the use of the substrate is not influenced, so that the substrate is more stable to use.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film metal oxide structure and a manufacturing method thereof. Background technique [0002] A variety of metal oxides exhibit desirable properties such as piezoelectricity, ferroelectricity, ferromagnetism, large magnetoresistance, and superconductivity. These oxides may be included or used in related microelectronic devices taking advantage of these properties. For example, metal oxides can be used to form ferroelectric memory devices and the like. In general, desirable properties of metal oxide films increase as the crystallinity of the oxide film increases. For example, superconducting materials exhibit the highest electrical conductivity when the material is in the form of a single crystal; in addition, it is also desired that these oxides are integrated with semiconductor elements to form devices such as memory devices; accordingly, it is desired to obtain ...

Claims

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Application Information

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IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1254C23C18/1283
Inventor 宋阳许宏军张雷彭肇华
Owner 陕西雷翔新材料科技有限公司