Line width measuring method
A measurement method and line width technology, applied in semiconductor/solid-state device testing/measurement, electrical components, electrical solid-state devices, etc., can solve the problems of high measurement accuracy and dimensional distortion, and achieve high measurement accuracy and improve dimensional distortion. Effect
Inactive Publication Date: 2021-06-29
泉芯集成电路制造(济南)有限公司
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[0004] In view of this, the present invention provides a method for measuring line width, which effectively solves the technical problems in the prior art and improves the dimensional distortion that occurs when measuring the line width of the developed area of the photoresist layer, Guaranteed high measurement accuracy of line width
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[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0037] As mentioned in the background technology, since CD-SEM uses electrons with accelerated voltage to scan to obtain secondary electron signals during measurement, it will indirectly cause thermal shrinkage of the photoresist layer due to the thermal effect of accelerated electrons. , and then distort the measured line width size.
[0038] Based on this, the embodiment of the present invention provides a method for measuring line width, which effectively s...
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Abstract
According to a line width measurement method provided by the invention, a development area pattern of a photoresist layer is transferred to a test substrate, and then the test substrate is measured so that the purpose of measuring a display area can be achieved. Moreover, as the test substrate covers the photoresist layer and the thermal expansion coefficient of the part filling the development area of the photoresist layer is smaller than that of the photoresist layer, the part of the test substrate is slightly deformed by heating; and therefore, when an electron microscope is adopted to collect the line width data on the test substrate, the condition of size distortion is improved, namely, the condition of size distortion occurring when the line width of the development area of the photoresist layer is measured is improved too, and the high measurement accuracy of the line width is ensured.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, relates to a method for measuring line width. Background technique [0002] In the advanced manufacturing process of semiconductors, optical image correction technology is widely used. To establish an optical image correction model, a large amount of line width (CD) data must be measured, and all graphics that conform to the rules above the design specifications must be collected one by one. A model usually More than 100,000 points of data need to be measured. At present, the general measurement method in the industry is to place the photoresist layer after exposure and development at the measurement station, and collect a large number of line width data of the developed area at the measurement station. The pattern size is usually on the nanometer scale, and the machine used is a line Wide Scanning Electron Microscopy (CD-SEM). [0003] Since CD-SEM uses el...
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IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/12H01L22/34H01L22/24
Inventor 陈庆煌柯思羽陈国强刘志成
Owner 泉芯集成电路制造(济南)有限公司