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Binding method for low-melting-point target

A technology with low melting point and target material, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problems of low melting point and low welding rate of bismuth metal, and achieve low price, low cost, and improved efficiency effect

Pending Publication Date: 2021-07-09
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, bismuth metal has a low melting point, and molecular crystallization chemical reactions will occur when bonding with indium at 160-200 ° C, bismuth and indium will melt, and the welding rate is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] An embodiment of the binding method of the low-melting target in the present invention, the low-melting target in this embodiment is a bismuth target, and the binding method of the low-melting target in this embodiment includes the following steps:

[0024] (1) The target embryo to be bound is pretreated with the copper backplane:

[0025] a1. Wipe the processed target embryo and copper back plate with alcohol to ensure that the surface is dry and free from oxidation. The binding surface Ra of the target embryo and the back plate is 1.8 microns;

[0026] a2. Cover the non-binding area between the target embryo and the copper back plate with high-temperature-resistant adhesive tape. It is required to paste it flat and free of air bubbles, so as to avoid graphite glue from penetrating into the non-binding area during coating, and obtain the pretreated target embryo and copper back plate. plate;

[0027] (2) Place the pretreated target blank and copper back plate on the h...

Embodiment 2

[0038] The difference between this embodiment and Embodiment 1 is that in step a1, the roughness of the bonding surface between the target embryo and the back plate is different, and Ra=1.6 microns in this embodiment.

[0039] After testing, the welding rate of the target obtained by using the binding method described in this embodiment is 97.65% obtained by scanning with a water immersion flaw detector, and the resistance of the bound target is 2.1 Ω.

Embodiment 3

[0041] The difference between this embodiment and Embodiment 1 is that in step a1, the roughness of the binding surface between the target embryo and the back plate is different, and Ra=1.4 microns in this embodiment.

[0042] After testing, the welding rate of the target obtained by using the binding method described in this embodiment is 95.5%, and the resistance of the target after binding is 2.1 ohms.

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Abstract

The invention discloses a binding method for a low-melting-point target. The binding method comprises the following steps: (1) pre-treating a target blank to be bound and a backboard; (2) forming a graphite conductive adhesive layer on the binding surface of the pretreated backboard, and arranging a copper wire at the edge of a binding area of the binding surface or arranging a copper screen in the binding area; (3) stacking the pretreated target blank on the binding surface of the backboard obtained in the step (2) and carrying out positioning; (4) arranging a pressing object on the surface of the target blank for pressing; and (5) curing the graphite conductive adhesive layer under the condition of keeping pressing, so as to obtain the bound target. According to the binding method, a graphite conductive adhesive is adopted as a binding material, so that the problem of reaction of bismuth and indium is effectively solved, binding is firm, and the welded rate meets the industrial standard. Compared with the mode of binding the target with indium, the binding method disclosed by the invention has the advantages that the cost of the graphite conductive adhesive is 60% lower than that of indium, and in the preparation process, the operating temperature of the graphite conductive adhesive is reduced by 30% compared with that of the indium, the power consumption is reduced, the time is shortened, and the efficiency is improved.

Description

technical field [0001] The invention relates to a processing method of a target, in particular to a binding method of a low melting point target. Background technique [0002] In the existing planar target binding process, the material bound to the back plate and the target embryo is usually indium, tin, tin silver, etc. The existing ITO binding technology is to heat the ITO and the back plate to 200°C Left and right, the indium solution is coated on the binding surface of the ITO and the backplane, and then the two coated surfaces are bonded together, and then a heavy object is added on the surface of the ITO to ensure that the bound target does not deviate and the size is guaranteed. within the qualified range. However, the melting point of bismuth metal is low, and molecular crystallization chemical reaction will occur when bonding with indium at 160-200°C, bismuth and indium will melt, and the welding rate is low. Contents of the invention [0003] The purpose of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 梁振耀黄宇彬毛远兴童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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