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Method for acquiring low-LET-value heavy ion single event upset cross section

A technology of single-particle flipping and heavy ions, which is applied in X-ray energy spectrum distribution measurement and other directions, can solve problems not involved in obtaining heavy ion single-particle flipping sections, and achieve lower experimental difficulty, reduced dependence, and reduced damage.

Pending Publication Date: 2021-07-13
NORTHWEST INST OF NUCLEAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Neither of these two approaches involves the acquisition of heavy-ion single-event flip cross-sections from low-energy proton experimental data

Method used

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  • Method for acquiring low-LET-value heavy ion single event upset cross section
  • Method for acquiring low-LET-value heavy ion single event upset cross section
  • Method for acquiring low-LET-value heavy ion single event upset cross section

Examples

Experimental program
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Embodiment Construction

[0047] Taking a certain static random access memory as an example, a specific embodiment is further described in detail in conjunction with the accompanying drawings. It should be understood that the following embodiment is only used to illustrate the present invention, but not to limit the scope of the present invention.

[0048] figure 1 It is a flow chart of a method for obtaining low LET value heavy ion single particle flip cross-section based on device low-energy proton experimental data of the present invention, combined with figure 1 , to describe the steps of the method in detail.

[0049] S1] Conduct longitudinal analysis of the device or communicate with the device developer to obtain information on multi-layer metal wiring layers above the sensitive area of ​​the device, including the thickness and material of each layer and the thickness of STI, see figure 2 .

[0050] S2] Based on the mastery of device information, a 10 MeV low-energy proton accelerator was sel...

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Abstract

The invention discloses a method for acquiring a low-LET-value heavy ion single event upset cross section. The method comprises the following steps: acquiring device packaging information, information of a multilayer metal wiring layer or a substrate above a sensitive region, and thickness information of a device STI isolation oxide layer; carrying out an irradiation experiment of single event upset caused by direct ionization of low-energy protons of a nano device, extracting a single event upset peak cross section sigma peak of the low-energy protons of the device, and recording the thickness of a corresponding energy reduction sheet; obtaining a critical charge of the device generating single event upset, and calculating an LET threshold value of the device generating single event upset; based on the LET threshold value, judging a proton energy interval which causes the device to generate single event upset, calculating the percentage epsilon of the number of protons in the energy interval in a sensitive region of the device at the low-energy proton single event upset peak value position in the total number of incident protons, and calculating corresponding average proton energy and an average LET value; and dividing the single event upset peak cross section of the low-energy proton by the percentage epsilon of the number of protons, and calculating an effective single event upset cross section corresponding to the average LET value.

Description

technical field [0001] The invention belongs to the field of space radiation effect simulation experiment technology and radiation-resistant reinforcement technology research field, and relates to a method for obtaining a low LET value heavy ion single-particle flip section. Background technique [0002] Heavy ions and protons are the main sources of single event effects in electronic devices in the space radiation environment. Compared with the proton single event effect experiment, the heavy ion single event effect experiment has higher requirements on ion energy and device samples, and the experimental technology is relatively more complicated. In device heavy ion single event effect experiments, it is usually necessary to perform Weibull function fitting based on the device heavy ion single event turnover cross-section experimental data, so as to evaluate the device's anti-single event capability and predict the on-orbit single event turnover rate of the device. With th...

Claims

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Application Information

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IPC IPC(8): G01T1/36
CPCG01T1/36
Inventor 罗尹虹陈伟张凤祁王坦丁李利赵雯潘霄宇
Owner NORTHWEST INST OF NUCLEAR TECH
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