Method for acquiring low-LET-value heavy ion single event upset cross section

Abstract

The invention discloses a method for acquiring a low-LET-value heavy ion single event upset cross section. The method comprises the following steps: acquiring device packaging information, information of a multilayer metal wiring layer or a substrate above a sensitive region, and thickness information of a device STI isolation oxide layer; carrying out an irradiation experiment of single event upset caused by direct ionization of low-energy protons of a nano device, extracting a single event upset peak cross section sigma peak of the low-energy protons of the device, and recording the thickness of a corresponding energy reduction sheet; obtaining a critical charge of the device generating single event upset, and calculating an LET threshold value of the device generating single event upset; based on the LET threshold value, judging a proton energy interval which causes the device to generate single event upset, calculating the percentage epsilon of the number of protons in the energy interval in a sensitive region of the device at the low-energy proton single event upset peak value position in the total number of incident protons, and calculating corresponding average proton energy and an average LET value; and dividing the single event upset peak cross section of the low-energy proton by the percentage epsilon of the number of protons, and calculating an effective single event upset cross section corresponding to the average LET value.

Description

technical field

[0001] The invention belongs to the field of space radiation effect simulation experiment technology and radiation-resistant reinforcement technology research field, and relates to a method for obtaining a low LET value heavy ion single-particle flip section. Background technique

[0002] Heavy ions and protons are the main sources of single event effects in electronic devices in the space radiation environment. Compared with the proton single event effect experiment, the heavy ion single event effect experiment has higher requirements on ion energy and device samples, and the experimental technology is relatively more complicated. In device heavy ion single event effect experiments, it is usually necessary to perform Weibull function fitting based on the device heavy ion single event turnover cross-section experimental data, so as to evaluate the device's anti-single event capability and predict the on-orbit single event turnover rate of the device. With th...

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